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AssigneeSony Corporation
InventorsGoshi Biwa, Hiroyuki Okuyama, Masato Doi, Toyoharu Oohata
Estimating the term…
Nitride semiconductor devices and methods of fabricating same are provided. The nitride semiconductor device includes a crystal layer grown into a three-dimensional shape having a side surface portion and an upper layer portion, wherein an electrode layer is formed on the upper layer portion via a high resistance region formed by an undoped gallium nitride layer or the like. Since the high resistance region is provided on the upper layer portion, a current flows so as to bypass the high resistance region of the upper layer portion, to form a current path extending mainly or substantially along the side surface portion while avoiding the upper layer portion, thereby suppressing the flow of a current in the upper layer portion poor in crystallinity.
A nitride semiconductor device comprising a crystal layer grown in a three-dimensional shape that has a side surface portion and an upper layer portion, wherein an electrode layer is formed on the upper layer portion over a high resistance region.
A nitride semiconductor device comprising a crystal layer grown on a nitride semiconductor layer including a nitride semiconductor substrate, the crystal layer comprising a first crystal portion, a second crystal portion wherein the first crystal portion has a greater crystallinity than the second crystal portion, and an electrode layer that is formed on the second crystal portion over a high resistance region.
A nitride semiconductor device comprising a crystal layer grown into a three-dimensional shape having a side surface portion and an upper layer portion, a first conductive region and a second conductive region that are formed on the crystal layer, wherein a resistance value between the first conductive region and the second conductive region on the upper layer portion side is larger than a resistance value between the first conductive region and the second conductive region on the side surface portion side.
A method of fabricating a nitride semiconductor device, the method comprising the steps of:
A nitride semiconductor device comprising a crystal layer grown into a three-dimensional shape having a ridge portion, and an electrode layer that is formed on both the ridge portion and a region extending along the ridge portion over a high resistance region.
A nitride semiconductor device comprising a crystal layer grown into a three-dimensional shape, and an electrode layer that is formed on both a bottom portion of the crystal layer and a region extending from the bottom portion over a high resistance region.
A nitride semiconductor device comprising a crystal layer grown into a three-dimensional shape, and an electrode layer that is formed on a flat surface portion of the crystal layer other than a ridge portion and a region extending along the ridge portion of the crystal layer.
A nitride semiconductor device comprising a crystal layer grown into a three-dimensional shape, wherein an electrode layer is formed on a flat surface portion of the crystal layer other than a bottom side portion and a region extending along the bottom side portion, of the crystal layer.
A nitride semiconductor device comprising a crystal layer grown into a three-dimensional shape having a side surface portion and an upper layer portion, wherein an electrode layer is formed on the side surface portion and not on an upper layer portion.
Dependencies are inferred from the claim text.