H01S 5/3202
Grown on specifically orientated substrates, or using orientation dependent growth
Official title: {grown on specifically orientated substrates, or using orientation dependent growth}
H01S5/3202 (Grown on specifically orientated substrates, or using orientation dependent growth) appears on 761 US grants and 635 published applications in this corpus.
Search patents in H01S- Granted patents
- 761
- Published applications
- 635
- Assignees
- 171
- Inventors
- 1,023
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 3 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 5 | 0 |
| 1991 | 7 | 0 |
| 1992 | 5 | 0 |
| 1993 | 5 | 0 |
| 1994 | 18 | 0 |
| 1995 | 14 | 0 |
| 1996 | 14 | 0 |
| 1997 | 12 | 0 |
| 1998 | 16 | 0 |
| 1999 | 18 | 0 |
| 2000 | 6 | 0 |
| 2001 | 8 | 5 |
| 2002 | 12 | 17 |
| 2003 | 12 | 16 |
| 2004 | 23 | 19 |
| 2005 | 15 | 24 |
| 2006 | 13 | 12 |
| 2007 | 6 | 14 |
| 2008 | 12 | 19 |
| 2009 | 10 | 40 |
| 2010 | 22 | 36 |
| 2011 | 29 | 79 |
| 2012 | 49 | 50 |
| 2013 | 59 | 50 |
| 2014 | 53 | 18 |
| 2015 | 49 | 28 |
| 2016 | 30 | 17 |
| 2017 | 35 | 23 |
| 2018 | 31 | 14 |
| 2019 | 24 | 14 |
| 2020 | 25 | 19 |
| 2021 | 18 | 31 |
| 2022 | 19 | 27 |
| 2023 | 22 | 21 |
| 2024 | 26 | 17 |
| 2025 | 19 | 11 |
| 2026 | 12 | 14 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Composition and method for making picocrystalline artificial borane atoms6 Oct 2026US 12,757,646 B2SemiNuclear, Inc.
- Ridge waveguide laser with dielectric current confinement29 Sep 2026US 12,749,872 B2Applied Optoelectronics, Inc.
- Corrugated buried heterostructure laser and method for fabricating the same25 Aug 2026US 12,719,238 B2National Research Council of Canada
- Laser based white light system configured for communication16 Jun 2026US 12,659,034 B2KYOCERA SLD Laser, Inc.
- Semiconductor laser element and method of producing semiconductor laser element5 May 2026US 12,620,770 B2Sony Group Corporation
- Vertical cavity light-emitting element20 Aug 2026US 2026/0246236 A1Stanley Electric Co., Ltd.
- Relaxed wurtzite ingan layers6 Aug 2026US 2026/0229852 A1Opnovix Corp.
- Semiconductor laser element18 Jun 2026US 2026/0171749 A1Rohm Co., Ltd.
- Vertical-cavity surface-emitting semiconductor laser and method for manufacturing vertical-cavity surface-emitting semiconductor laser18 Jun 2026US 2026/0171755 A1Sony Group Corporation
- Relaxed wurtzite ingan layers4 Jun 2026US 2026/0155632 A1Opnovix Corp.
Most cited
By later US patents
- Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device643US 6,153,010 ANichia Chemical Industries, Ltd. · 2000
- Nitride semiconductor element and production method for nitride semiconductor element498US 6,818,465 B2Sony Corporation · 2004
- Polarized surface-emitting laser358US 5,331,654 APhotonics Research Incorporated · 1994
- Semiconductor light emitting device and semiconductor laser289US 6,680,959 B2Rohm Co., Ltd. · 2004
- Method and surface morphology of non-polar gallium nitride containing substrates269US 8,247,887 B1Soraa, Inc. · 2012