H01S 5/320275
Semi-polar orientation
Official title: {semi-polar orientation}
H01S5/320275 (Semi-polar orientation) appears on 312 US grants and 264 published applications in this corpus.
Search patents in H01S- Granted patents
- 312
- Published applications
- 264
- Assignees
- 57
- Inventors
- 286
- Latest grant
- 31 Mar 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2001 | 1 | 3 |
| 2002 | 0 | 2 |
| 2003 | 5 | 4 |
| 2004 | 5 | 0 |
| 2005 | 1 | 5 |
| 2006 | 2 | 4 |
| 2007 | 1 | 1 |
| 2008 | 4 | 8 |
| 2009 | 4 | 11 |
| 2010 | 12 | 16 |
| 2011 | 11 | 49 |
| 2012 | 27 | 34 |
| 2013 | 35 | 31 |
| 2014 | 32 | 7 |
| 2015 | 27 | 14 |
| 2016 | 17 | 8 |
| 2017 | 20 | 5 |
| 2018 | 19 | 9 |
| 2019 | 18 | 4 |
| 2020 | 15 | 7 |
| 2021 | 12 | 13 |
| 2022 | 7 | 9 |
| 2023 | 16 | 6 |
| 2024 | 12 | 9 |
| 2025 | 7 | 3 |
| 2026 | 2 | 2 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Phosphor structures31 Mar 2026US 12,592,547 B2KYOCERA SLD Laser, Inc.
- Vertical cavity light-emitting element13 Jan 2026US 12,525,769 B2Stanley Electric Co., Ltd.
- Nanowire light emitting devices4 Nov 2025US 12,463,402 B2The Regents of the University of Michigan
- Safe laser light16 Sep 2025US 12,418,156 B1KYOCERA SLD Laser, Inc.
- Semiconductor laser and method of manufacturing semiconductor laser12 Aug 2025US 12,388,234 B2Sony Group Corporation
- Vertical cavity light-emitting element20 Aug 2026US 2026/0246236 A1Stanley Electric Co., Ltd.
- Multi-emitter laser device structures1 Jan 2026US 2026/0005489 A1KYOCERA SLD Laser, Inc.
- Specialized mobile light device configured with a gallium and nitrogen containing laser source13 Mar 2025US 2025/0087965 A1KYOCERA SLD Laser, Inc.
- Wearable laser based display method and system20 Feb 2025US 2025/0060594 A1KYOCERA SLD Laser, Inc.
- Nanowire light emitting devices6 Feb 2025US 2025/0047075 A1The Regents of the University of Michigan
Most cited
By later US patents
- Semiconductor light emitting device and semiconductor laser289US 6,680,959 B2Rohm Co., Ltd. · 2004
- Optical information processing equipment and semiconductor light emitting device suitable therefor258US 6,639,925 B2Hitachi, Ltd. · 2003
- Growth structures and method for forming laser diodes on {30-31} or off cut gallium and nitrogen containing substrates237US 8,351,478 B2Soraa, Inc. · 2013
- Method of fabricating nitride semiconductor laser234US 7,939,354 B2Sumitomo Electric Industries, Ltd. · 2011
- Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates234US 8,259,769 B1Soraa, Inc. · 2012