Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates

A gallium and nitrogen semipolar substrate having a laser diode thereon, the laser diode comprising:

• a first waveguide section provided on the semipolar substrate and extending in a projection of a c-direction of the semipolar substrate, the first waveguide section having a first gain characteristic and having a first end and a second end;
• a second waveguide section provided on the semipolar substrate and extending in an m-direction of the semipolar substrate and substantially perpendicular to the first waveguide section, the second waveguide section having a second gain characteristic and extending between the first end of the first waveguide section and a first cleaved m face which is substantially perpendicular to the m-direction;
• a first total internal reflection surface at the first end of the first waveguide section to transmit substantially all light between the first waveguide section and the second waveguide;
• a third waveguide section provided on the semipolar substrate and extending in an m-direction substantially perpendicular to the first waveguide section, the third waveguide section also having a second gain characteristic and extending between the second end of the first waveguide section, and a second cleaved m face which is substantially perpendicular to the m-direction;
• and
• wherein the combination of the first waveguide section, the second waveguide section, the third waveguide section, the first cleaved face and the second cleaved face provide the laser diode.