Growth structures and method for forming laser diodes on {30-31} or off cut gallium and nitrogen containing substrates

A device comprising:

• a gallium and nitrogen containing substrate member having a {30-31} crystalline surface region, the {30-31} crystalline surface region being selected from either (30-31) or (30-3-1);
• an active region overlying a portion of the {30-31} crystalline surface region;
• a laser stripe region formed overlying the active region, the laser stripe region being characterized by a cavity orientation parallel to a projection of the c-direction, the laser stripe region having a first end and a second end;
• a first facet provided on the first end of the laser stripe region, the first facet being substantially orthogonal to the laser stripe region and provided by a scribing process and a breaking process;
• and
• a second facet provided on the second end of the laser stripe, the second facet being substantially orthogonal to the laser stripe region and provided by the scribing process and the breaking process;
• wherein the scribing process is performed with a laser using a top-side skip-scribe technique or a back-side scribing technique, the first facet is substantially parallel with the second facet, and the {30-31} crystalline surface region is off-cut less than +/−8 degrees toward or away from an a-plane, and the active region is configured to emit light characterized by a wavelength ranging from about 500 nm to about 580 nm, or from about 430 nm to about 480 nm.

A device comprising:

• a gallium and nitrogen containing substrate member having a {30-31} crystalline surface region, the {30-31} crystalline surface region being selected from either (30-31) or (30-3-1);
• an active region overlying a portion of the {30-31} crystalline surface region;
• a laser stripe region formed overlying the active region, the laser stripe region being characterized by a cavity orientation parallel to a projection of the c-direction, the laser stripe region having a first end and a second end;
• a first facet provided on the first end of the laser stripe region, the first facet being substantially orthogonal to the laser stripe region;
• and
• a second facet provided on the second end of the laser stripe, the second facet being substantially orthogonal to the laser stripe region,
• wherein the {30-31} crystalline surface region is off-cut less than +/−3 degrees toward or away from a c-plane, and the active region is configured to emit light characterized by a wavelength ranging from about 500 nm to about 580 nm, or from about 430 nm to about 480 nm.

A device comprising:

• a gallium and nitrogen containing substrate member having a {30-31} crystalline surface region;
• an active region formed overlying a portion of the {30-31} crystalline surface region;
• a laser stripe region formed overlying the active region, the laser stripe region being characterized by a cavity orientation parallel to a projection of the c-direction, the laser stripe region having a first end and a second end;
• a first semipolar surface facet provided on the first end of the laser stripe region;
• and
• a second semipolar surface facet provided on the second end of the laser stripe region;
• wherein the optical device comprises one or more cladding layers that are substantially aluminum-free, and the {30-31} crystalline surface region is off-cut less than +/−3 degrees toward or away from a c-plane.