Optical information processing equipment and semiconductor light emitting device suitable therefor

A semiconductor light emitting device comprising:

• at least a strained quantum-well active layer region made from a wurtzite type semiconductor material,
• wherein a crystal growth direction of said strained quantum-well active layer region is parallel to an axis which is inclined 10° to 60° from the [0001] axis (c-axis),
• wherein said strained quantum-well active layer region constitutes part of a semiconductor laser resonator, and
• wherein an end surface of said semiconductor laser resonator is parallel to a plane containing both the crystal growth axis of said strained quantum-well active layer region and the [0001] axis (c-axis).

A semiconductor light emitting device comprising:

• at least a strained quantum-well active layer region made from a wurtzite type semiconductor material,
• wherein a crystal growth direction of said strained quantum-well active layer region is parallel to an axis which is inclined 20° to 55° from the [0001] axis (c-axis),
• wherein said strained quantum-well active layer region constitutes part of a semiconductor laser resonator, and
• wherein an end surface of said semiconductor laser resonator is parallel to a plane containing both the crystal growth axis of said strained quantum-well active layer region and the [0001] axis (c-axis).