Semiconductor laser and method of manufacturing semiconductor laser
AssigneeSony Group Corporation
InventorsYasuhiro Kadowaki, Hideki Watanabe
Life of this patent
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Abstract
A semiconductor laser including: a stacked body in which a first cladding layer of a first conductivity type, a second cladding layer of a second conductivity type, and a light emission layer provided between the first cladding layer and the second cladding layer are stacked on a semiconductor substrate; and a ridge part provided as a projection structure extending in one direction at a top surface in a stacking direction of the stacked body, in which the stacked body is provided to have both end surfaces in the extending direction of the ridge part that each have a shape including an arc in a plan view of the stacked body from the top surface.
Claims15
A semiconductor laser comprising:
- a stacked body in which a first cladding layer of a first conductivity type, a second cladding layer of a second conductivity type, and a light emission layer provided between the first cladding layer and the second cladding layer are stacked on a semiconductor substrate;
- and
- a ridge part provided as a projection structure extending in one direction at a top surface in a stacking direction of the stacked body, in which
- the stacked body is provided to have both end surfaces in the extending direction of the ridge part that each have a shape including an arc in a plan view of the stacked body from the top surface,
- a plan shape of the stacked body in the plan view from the top surface is a longitudinal shape that extends in the extending direction,
- the both end surfaces of the stacked body in the extending direction are provided to be convex or concave with respect to the stacked body,
- the both end surfaces are provided to be substantially flat in a region corresponding to the ridge part, and
- in the region in which the both end surfaces are substantially flat, the both end surfaces have irregularities of a magnitude greater than or equal to 0.02 μm and smaller than or equal to 0.1 μm.
A method of manufacturing a semiconductor laser, comprising:
- forming a stacked body by stacking a first cladding layer of a first conductivity type, a second cladding layer of a second conductivity type, and a light emission layer provided between the first cladding layer and the second cladding layer on a semiconductor substrate;
- forming a ridge part having a projection structure extending in one direction at a top surface in a stacking direction of the stacked body;
- forming a dividing groove from the top surface toward a depth direction, the dividing groove being curved;
- and
- subjecting the stacked body to singulation to allow both end parts in the extending direction of the ridge part to each have a shape including an arc in a plan view of the stacked body from the top surface, wherein
- a plan shape of the stacked body in the plan view from the top surface is a longitudinal shape that extends in the extending direction,
- the both end surfaces of the stacked body in the extending direction are provided to be convex or concave with respect to the stacked body,
- the both end surfaces are provided to be substantially flat in a region corresponding to the ridge part, and
- in the region in which the both end surfaces are substantially flat, the both end surfaces have irregularities of a magnitude greater than or equal to 0.02 μm and smaller than or equal to 0.1 μm.
A semiconductor laser comprising:
- a stacked body in which a first cladding layer of a first conductivity type, a second cladding layer of a second conductivity type, and a light emission layer provided as a semipolar plane between the first cladding layer and the second cladding layer are stacked on a semiconductor substrate;
- and
- a ridge part provided as a projection structure extending in one direction at a top surface in a stacking direction of the stacked body, in which
- the stacked body is provided to have both end surfaces in the extending direction of the ridge part that each have a shape including an arc in a plan view of the stacked body from the top surface,
- a plan shape of the stacked body in the plan view from the top surface is a longitudinal shape that extends in the extending direction,
- the both end surfaces of the stacked body in the extending direction are provided to be convex or concave with respect to the stacked body,
- the both end surfaces are provided to be substantially flat in a region corresponding to the ridge part, and
- in the region in which the both end surfaces are substantially flat, the both end surfaces have irregularities of a magnitude greater than or equal to 0.02 μm and smaller than or equal to 0.1 μm.
Dependencies are inferred from the claim text.