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US 12,463,402 B2Granted
Nanowire light emitting devices
AssigneeThe Regents of the University of Michigan
InventorsYong-Ho Ra, Roksana Tonny Rashid, Xianhe Liu, Zetian Mi
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Abstract
An all-epitaxial, electrically injected surface-emitting green laser operates in a range of about 520-560 nanometers (nm). At 523 nm, for example, the device exhibits a threshold current density of approximately 0.4 kilo-amperes per square centimeter (kA/cm2), which is over one order of magnitude lower than that of previously reported blue laser diodes.
Claims19
A light emitting device including a plurality of nanowires, the nanowires comprising:
- a n-doped gallium nitride (n-GaN) cladding layer;
- a heterostructure region comprising a semipolar plane disposed on the n-GaN cladding layer;
- and
- a p-doped gallium nitride (p-GaN) cladding layer disposed on the heterostructure region;
- wherein the plurality of nanowires have a photonic crystalline structure with a reciprocal latter comprising six equivalent and coupled Brillouin zone gamma points;
- and
- wherein the plurality of nanowires have predetermined size and spacing.
4 more elements
A light emitting device comprising:
- a substrate;
- and
- a plurality of nanowires, wherein the plurality of nanowires comprise;
- a first cladding layer having a first doping type;
- a heterostructure region comprising a semipolar plane disposed on the first cladding layer;
- and
- a second cladding layer having a second doping type disposed on the heterostructure;
- wherein the plurality of nanowires have a photonic crystalline structure with a reciprocal latter comprising six equivalent and coupled Brillouin zone gamma points;
- and
- wherein the plurality of nanowires have a predetermined size and spacing in an array.
7 more elements
Dependencies are inferred from the claim text.