H01S 5/320225
Polar orientation
Official title: {polar orientation}
H01S5/320225 (Polar orientation) appears on 99 US grants and 119 published applications in this corpus.
Search patents in H01S- Granted patents
- 99
- Published applications
- 119
- Assignees
- 49
- Inventors
- 209
- Latest grant
- 5 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 2 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 2 | 1 |
| 2002 | 3 | 5 |
| 2003 | 1 | 5 |
| 2004 | 7 | 5 |
| 2005 | 5 | 7 |
| 2006 | 3 | 4 |
| 2007 | 1 | 5 |
| 2008 | 6 | 4 |
| 2009 | 4 | 8 |
| 2010 | 4 | 3 |
| 2011 | 5 | 13 |
| 2012 | 6 | 1 |
| 2013 | 2 | 5 |
| 2014 | 4 | 3 |
| 2015 | 4 | 3 |
| 2016 | 6 | 4 |
| 2017 | 2 | 5 |
| 2018 | 3 | 3 |
| 2019 | 2 | 1 |
| 2020 | 4 | 2 |
| 2021 | 1 | 8 |
| 2022 | 2 | 8 |
| 2023 | 3 | 5 |
| 2024 | 6 | 1 |
| 2025 | 5 | 3 |
| 2026 | 4 | 7 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor laser element and method of producing semiconductor laser element5 May 2026US 12,620,770 B2Sony Group Corporation
- Relaxed Wurtzite Ingan layers3 Feb 2026US 12,542,413 B2Opnovix Corp.
- Manufacturable gallium containing electronic devices27 Jan 2026US 12,538,537 B2KYOCERA SLD Laser, Inc.
- Surface-emitting laser element and surface-emitting laser element manufacturing method13 Jan 2026US 12,525,767 B2Kyoto University
- Manufacturable gallium and nitrogen containing single frequency laser diode4 Nov 2025US 12,464,802 B2KYOCERA SLD Laser, Inc.
- Relaxed wurtzite ingan layers6 Aug 2026US 2026/0229852 A1Opnovix Corp.
- Relaxed wurtzite ingan layers4 Jun 2026US 2026/0155632 A1Opnovix Corp.
- Manufacturable gallium containing electronic devices4 Jun 2026US 2026/0156886 A1KYOCERA SLD Laser, Inc.
- Surface-emitting laser element and surface-emitting laser element manufacturing method9 Apr 2026US 2026/0100556 A1Kyoto University
- Manufacturable gallium and nitrogen containing single frequency laser diode12 Feb 2026US 2026/0047178 A1KYOCERA SLD Laser, Inc.
Most cited
By later US patents
- Gallium nitride group compound semiconductor laser diode190US 5,247,533 AToyoda Gosei Co., Ltd. · 1993
- Nitride-compound semiconductor device176US 6,316,785 B1Kabushiki Kaisha Toshiba · 2001
- Manufacturable thin film gallium and nitrogen containing devices87US 9,666,677 B1Soraa Laser Diode, Inc. · 2017
- Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures86US 6,812,053 B1Cree, Inc. · 2004
- Single step pendeo-and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structures82US 6,582,986 B2Cree, Inc. · 2003