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US 6,316,785 B1Granted
Nitride-compound semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsShinya Nunoue, Masahiro Yamamoto
Life of this patent
Estimating the term…
Abstract
A GaAlInBN systems semiconductor device is spaced apart from a substrate by a layer for reducing the propagation of a dislocation. This layer has a protrusion or protrusions, each having sidewalls on which a single crystal is exposed.
Claims14
A nitride-compound semiconductor device comprising:
- a substrate having a top surface;
- a first layer disposed on said top surface of said substrate, said first layer formed from the materials represented as AlxGayInzB1−(x+y+z)N where 0≦x,y,z and x+y+z≦1;
- a second layer disposed on said first layer, said second layer formed from the materials represented as AluGavInwB1−(u+v+w)N where 0≦u,v,w and u+v+w≦1;
- and
- a semiconductor element disposed on said second layer;
- wherein said first layer and said second layer form an interface having a plurality of protrusions, and where a side wall, a top surface, and a bottom surface of each protrusion is a single crystal.
3 more elements
A nitride-compound semiconductor device comprising:
- a substrate having a top surface;
- at least one structure disposed on the top surface of the substrate and having a single crystal side wall, said structure being formed from the materials represented as AlxGayInzB1−(x+y+z)N where 0≦x,y,z and x+y+z≦1;
- a layer disposed on said structure, said layer being formed from the materials represented as AluGavInwB1−(u+v+w)N where 0≦u,v,w and u+v+w≦1;
- and
- a semiconductor element disposed on said layer;
- wherein said structure has a plurality of protrusions, each having a height d1 of 0.1 to two microns and a width W2 of at least one micron at its top, every two adjoining protrusions having a distance W1 of one to 10 microns therebetween.
3 more elements
A nitride-compound semiconductor device comprising:
- a substrate having a top surface;
- a layer disposed on said top surface of said substrate, said layer having a lower and an upper portion having a boundary therebetween on which a plurality of protrusions are disposed, each protrusion having a sidewall which is a single crystal, said lower and said upper portion being formed from the materials represented as AlxGayInzB1−(x+y+z)N where 0≦x,y,z and x+y+z≦1, and AluGavInwB1−(u+v+w)N where 0≦u,v,w and u+v+w≦1, respectively;
- and
- a semiconductor element disposed on said layer;
- wherein said protrusion having a height d1 of 0.1 to two microns and a width W2 of at least one micron at its top, every two adjoining protrusions having a distance W1 of one to 10 microns therebetween.
2 more elements
A nitride-compound semiconductor device comprising:
- a substrate having a top surface;
- a first layer disposed on the top surface of said substrate, said first layer formed from the materials represented as AlxGayInzB1−(x+y+z)N where 0≦x,y,z and x+y+z≦1, said first layer having a plurality of dislocations oriented in a direction perpendicular to said top surface of said substrate;
- a second layer disposed on said first layer, said second layer formed from the materials represented as AluGavInwB1−(u+v+w)N where 0≦u,v,w and u+v+w≦1, said second layer having a plurality of dislocations oriented lateral to said top surface of said substrate;
- and
- a semiconductor element disposed on said second layer;
- wherein said first layer and said second layer form an interface having a plurality of protrusions, and where a side wall, a top surface, and a bottom surface of each protrusion is a single crystal.
3 more elements
A nitride-compound semiconductor device comprising:
- a substrate having a top surface;
- a first layer disposed on the top surface of said substrate, said first layer formed from the materials represented as AlxGayInzB1−(x+y+z)N where 0≦x,y,z and x+y+z≦1, said first layer having a plurality of dislocations oriented in a direction perpendicular to said top surface of said substrate;
- a second layer disposed on said first layer, said second layer formed from the materials represented as AluGavInwB1−(u+v+w)N where 0≦u,v,w and u+v+w≦1, said second layer having a plurality of dislocations oriented lateral to said top surface of said substrate;
- and
- a semiconductor element disposed on said second layer;
- wherein said first layer and said second layer form an interface having protrusions of which sidewall is a single crystal;
- wherein said protrusions have a height d1 of 0.1 to two microns and a width W2 of at least one micron at its top, every two adjoining protrusions having a distance W1 of one to 10 microns therebetween.
4 more elements
Dependencies are inferred from the claim text.