Semiconductor laser element and method of producing semiconductor laser element

A method of producing a semiconductor laser element, the method comprising:

• preparing a stacked body that includes:
• a substrate,
• an n-type semiconductor layer on the substrate, wherein
• the n-type semiconductor layer comprises an n-type semiconductor material,
• the n-type semiconductor layer has a core, and
• the core is a defect concentration region,
• an active layer on the n-type semiconductor layer, and
• a p-type semiconductor layer on the active layer, wherein the p-type semiconductor layer comprises a p-type semiconductor material;
• forming, by etching, a recessed portion that has a depth from a surface of the p-type semiconductor layer to the core of the n-type semiconductor layer, wherein the core excludes the recessed portion;
• and
• implanting ions into a region of the stacked body including the core to form an ion implantation region, wherein the ion implantation region has a specific depth from the recessed portion.