H01S 5/32025
Non-polar orientation
Official title: {non-polar orientation}
H01S5/32025 (Non-polar orientation) appears on 172 US grants and 133 published applications in this corpus.
Search patents in H01S- Granted patents
- 172
- Published applications
- 133
- Assignees
- 53
- Inventors
- 200
- Latest grant
- 21 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 3 | 0 |
| 2001 | 1 | 2 |
| 2002 | 1 | 2 |
| 2003 | 1 | 1 |
| 2004 | 1 | 3 |
| 2005 | 2 | 2 |
| 2006 | 3 | 0 |
| 2007 | 0 | 4 |
| 2008 | 1 | 7 |
| 2009 | 3 | 15 |
| 2010 | 4 | 12 |
| 2011 | 9 | 8 |
| 2012 | 11 | 7 |
| 2013 | 11 | 7 |
| 2014 | 10 | 3 |
| 2015 | 15 | 6 |
| 2016 | 9 | 5 |
| 2017 | 18 | 8 |
| 2018 | 12 | 6 |
| 2019 | 11 | 4 |
| 2020 | 10 | 5 |
| 2021 | 7 | 9 |
| 2022 | 7 | 5 |
| 2023 | 8 | 3 |
| 2024 | 7 | 4 |
| 2025 | 4 | 3 |
| 2026 | 1 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Large area synthesis of cubic phase gallium nitride on silicon21 Apr 2026US 12,610,762 B2The Board of Trustees of the University of Illinois
- Large area synthesis of cubic phase gallium nitride on silicon9 Sep 2025US 12,412,751 B2The Board of Trustees of the University of Illinois
- Low voltage laser diodes on {20-21} gallium and nitrogen containing surfaces10 Jun 2025US 12,327,984 B2KYOCERA SLD Laser, Inc.
- Non-c-plane group III-nitride-based VCSELs with nanoporous distributed Bragg reflector mirrors20 May 2025US 12,308,615 B2
- High-luminous flux laser-based white light source4 Feb 2025US 12,218,477 B2KYOCERA SLD Laser, Inc.
- Non-c-plane group iii-nitride-based vcsels with nanoporous distributed bragg reflector mirrors28 May 2026US 2026/0149238 A1UNM Rainforest Innovations
- Multi-emitter laser device structures1 Jan 2026US 2026/0005489 A1KYOCERA SLD Laser, Inc.
- Large area synthesis of cubic phase gallium nitride on silicon18 Dec 2025US 2025/0385099 A1The Board of Trustees of the University of Illinois
- Manufacturable devices formed on gallium and nitrogen material27 Feb 2025US 2025/0070536 A1KYOCERA SLD Laser, Inc.
- Wearable laser based display method and system20 Feb 2025US 2025/0060594 A1KYOCERA SLD Laser, Inc.
Most cited
By later US patents
- Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device643US 6,153,010 ANichia Chemical Industries, Ltd. · 2000
- Method and surface morphology of non-polar gallium nitride containing substrates269US 8,247,887 B1Soraa, Inc. · 2012
- Growth structures and method for forming laser diodes on {30-31} or off cut gallium and nitrogen containing substrates237US 8,351,478 B2Soraa, Inc. · 2013
- Method of fabricating nitride semiconductor laser234US 7,939,354 B2Sumitomo Electric Industries, Ltd. · 2011
- Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates234US 8,259,769 B1Soraa, Inc. · 2012