Non-c-plane group III-nitride-based VCSELs with nanoporous distributed Bragg reflector mirrors
OwnerDaniel F. Feezell, Morteza Monavarian +1inventors
InventorsDaniel F. Feezell, Morteza Monavarian, Saadat M. Mishkat-Ul-Masabih
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Abstract
An electrically injected vertical-cavity surface emitting laser (VCSEL) and a method of manufacturing the same is disclosed. The electrically injected VCSEL includes a non-c-plane substrate and a nanoporous bottom distributed Bragg reflector (DBR) comprising a plurality of alternating highly doped III-nitride layers and unintentionally doped III-nitride layers formed above the substrate.
Claims20
An electrically injected III-nitride vertical-cavity surface emitting laser (VCSEL) comprising:
- a non-c-plane substrate;
- an epitaxial nanoporous bottom distributed Bragg reflector (DBR) comprising a plurality of alternating highly doped III-nitride layers and unintentionally doped III-nitride layers formed above the substrate;
- an GaN heat spreading layer formed directly on a surface of the epitaxial nanoporous bottom DBR;
- an indium tin oxide (ITO) layer formed above the GaN heat spreading layer;
- an n+GaN contact layer;
- an n−GaN cladding layer;
- an active region;
- an electron blocking layer;
- a p−GaN cladding layer;
- an p+GaN contact layer;
- a cavity spacer;
- and
- a top DBR,
- wherein the GaN heat spreading layer comprises unintentionally doped GaN.
An electrically injected III-nitride vertical-cavity surface emitting laser (VCSEL) comprising:
- a non-c-plane substrate;
- an epitaxial nanoporous bottom distributed Bragg reflector (DBR) comprising a plurality of alternating highly doped III-nitride layers and unintentionally doped III-nitride layers formed above the substrate;
- an active region;
- one or more ion-implanted apertures formed in an aperture layer above the active region and configured to allow current to flow through the VCSEL;
- an unintentionally doped (UID) GaN heat spreading layer formed above the epitaxial nanoporous bottom DBR;
- an indium tin oxide (ITO) layer formed above the UID GaN heat spreading layer, and
- a cavity spacer formed above the ITO layer.
Dependencies are inferred from the claim text.