H01S 5/322
Type-ii junctions
Official title: {type-II junctions}
H01S5/322 (Type-ii junctions) appears on 10 US grants and 6 published applications in this corpus.
Search patents in H01S- Granted patents
- 10
- Published applications
- 6
- Assignees
- 13
- Inventors
- 29
- Latest grant
- 12 Sep 2023
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 2 |
| 2004 | 2 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 2 |
| 2007 | 0 | 0 |
| 2008 | 1 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 1 | 0 |
| 2012 | 0 | 1 |
| 2013 | 1 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 0 |
| 2019 | 0 | 0 |
| 2020 | 0 | 0 |
| 2021 | 0 | 0 |
| 2022 | 0 | 1 |
| 2023 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- SiGeSn laser diodes and method of fabricating same12 Sep 2023US 11,757,257 B2Board of Trustees of the University of Arkansas
- Quantum cascade lasers with electrically tunable emission wavelengths29 Oct 2013US 8,571,082 B2Board of Regents, The University of Texas System
- Semiconductor light source with electrically tunable emission wavelength25 Jan 2011US 7,876,795 B2Maxion Technologies, Inc.
- Nitride semiconductor device16 Sep 2008US 7,425,732 B2Matsushita Electric Industrial Co., Ltd.
- Hetero-junction laser diode11 May 2004US 6,734,464 B2Fujitsu Limited
- Sigesn laser diodes and method of fabricating same31 Mar 2022US 2022/0102942 A1Board of Trustees of the University of Arkansas
- Quantum Cascade Lasers with Electrically Tunable Emission Wavelengths17 May 2012US 2012/0120972 A1Board of Regents, The University of Texas System
- Nitride semiconductor device2 Nov 2006US 2006/0244003 A1Matsushita Electric Industrial Co., Ltd.
- Semiconductor light source with electrically tunable emission wavelength16 Mar 2006US 2006/0056466 A1Maxion Technologies, Inc.
- Laser diode22 May 2003US 2003/0094617 A1Fujitsu Limited
Most cited
By later US patents
- Light emitting semiconductor device26US 4,992,837 AKokusai Denshin Denwa Kabushiki Kaisha · 1991
- Semiconductor laser structure for improved stability of the threshold current with respect to changes in the ambient temperature7US 5,483,547 ANorthern Telecom Limited · 1996
- Laser diode with electron and hole confinement and barrier layers6US 5,475,700 AMonda & Associates · 1995
- Wide bandgap semiconductor light emitters5US 5,371,409 ACalifornia Institute of Technology · 1994
- Semiconductor light source with electrically tunable emission wavelength2US 7,876,795 B2Maxion Technologies, Inc. · 2011