Nitride semiconductor device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsTetsuzo Ueda, Satoshi Nakazawa, Daisuke Ueda, Toshiyuki Takizawa
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Abstract
A nitride semiconductor device includes an active layer including a first nitride semiconductor layer and a second nitride semiconductor layer which are periodically stacked, the second nitride semiconductor layer having a different composition from a composition of the first nitride semiconductor layer. An energy at a lower edge of a conduction band in the first nitride semiconductor layer is lower than an energy at a lower edge of a conduction band in the second nitride semiconductor layer, and an energy at an upper edge of a valence band in the first nitride semiconductor layer is lower than an energy at an upper edge of a valence band in the second nitride semiconductor layer.
Claims14
A nitride semiconductor device comprising an active layer including a first nitride semiconductor layer and a second nitride semiconductor layer periodically stacked, the second nitride semiconductor layer having a different composition from a composition of the first nitride semiconductor layer,
- wherein an energy at a lower edge of a conduction band in the first nitride semiconductor layer is lower than an energy at a lower edge of a conduction band in the second nitride semiconductor layer,
- an energy at an upper edge of a valence band in the first nitride semiconductor layer is lower than an energy at an upper edge of a valence band in the second nitride semiconductor layer, and
- the first nitride semiconductor layer is a quaternary alloy crystal layer formed of a compound expressed by a general formula of InxAlyGal-x-yN (where 0<x<1 and 0<y1).
A nitride semiconductor device comprising an active layer including a first nitride semiconductor layer and a second nitride semiconductor layer periodically stacked, the second nitride semiconductor layer having a different composition from a composition of the first nitride semiconductor layer,
- wherein an energy at a lower edge of a conduction band in the first nitride semiconductor layer is lower than an energy at a lower edge of a conduction band in the second nitride semiconductor layer,
- an energy at an upper edge of a valence band in the first nitride semiconductor layer is lower than an energy at an upper edge of a valence band in the second nitride semiconductor layer,
- a lattice constant of the first nitride semiconductor layer is different from a lattice constant of the second nitride semiconductor layer, and
- the second nitride semiconductor layer is a binary alloy crystal layer or a ternary alloy crystal layer formed of a compound expressed by a general formula of AlxGal-xN (where 0≦x≦1) or is a binary alloy crystal layer or a ternary alloy crystal layer formed of a compound expressed by a general formula of InxGal-xN (where 0<x≦1).
Dependencies are inferred from the claim text.