Nitride semiconductor device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsTetsuzo Ueda, Satoshi Nakazawa, Daisuke Ueda, Toshiyuki Takizawa
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Abstract
A nitride semiconductor device includes an active layer including a first nitride semiconductor layer and a second nitride semiconductor layer which are periodically stacked, the second nitride semiconductor layer having a different composition from a composition of the first nitride semiconductor layer. An energy at a lower edge of a conduction band in the first nitride semiconductor layer is lower than an energy at a lower edge of a conduction band in the second nitride semiconductor layer, and an energy at an upper edge of a valence band in the first nitride semiconductor layer is lower than an energy at an upper edge of a valence band in the second nitride semiconductor layer.
Claims16
A nitride semiconductor device comprising an active layer including a first nitride semiconductor layer and a second nitride semiconductor layer periodically stacked, the second nitride semiconductor layer having a different composition from a composition of the first nitride semiconductor layer,
- wherein an energy at a lower edge of a conduction band in the first nitride semiconductor layer is lower than an energy at a lower edge of a conduction band in the second nitride semiconductor layer, and
- an energy at an upper edge of a valence band in the first nitride semiconductor layer is lower than an energy at an upper edge of a valence band in the second nitride semiconductor layer.
Dependencies are inferred from the claim text.