Light emitting semiconductor device
AssigneeKokusai Denshin Denwa Kabushiki Kaisha
InventorsKazuo Sakai, Yukitoshi Kushiro, Kohsuke Nishimura
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Abstract
A light emitting semiconductor device which emits blue and/or green light has an active layer and a pair of clad layers which sandwich the active layer, and which are deposited on a semiconductor substrate. The substrate is made of one of GaAs, GaP, InP, Si, Ge, ZnSe and mixed crystals of GaAsP. The active layer is made of at least one of II-VI group compound semiconductor, I-III-VI.sub.2 group compound semiconductor, and II-IV-V.sub.2 group compound semiconductor. The clad layer is made of II-transition metal-VI group compound semiconductor, which is lattice-matched to the active layer.
Claims9
A light emitting semiconductor device comprising;
- a substrate,
- an active layer and a pair of clad layers sandwiching said active layer, deposited on said substrate,
- said substrate being made of one selected from GaAs, GaP, InP, Si, Ge, ZnSe and mixed crystal of GaAsP,
- said active layer being made of at least one selected from II-VI group compound semiconductor, I-III-VI.sub.2 group compound semiconductor, and II-IV-V.sub.2 group compound semiconductor,
- said clad layer being made of II-transition metal-VI group compound semiconductor, which is substantially lattice-matched to semiconductor of said active layer, and has higher energy gap than that of said active layer.
Dependencies are inferred from the claim text.