H01S 5/3211
Characterised by special cladding layers
Official title: {characterised by special cladding layers, e.g. details on band-discontinuities}
H01S5/3211 (Characterised by special cladding layers) appears on 1,141 US grants and 1,066 published applications in this corpus.
Search patents in H01S- Granted patents
- 1,141
- Published applications
- 1,066
- Assignees
- 341
- Inventors
- 1,890
- Latest grant
- 23 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 7 | 0 |
| 1989 | 6 | 0 |
| 1990 | 4 | 0 |
| 1991 | 11 | 0 |
| 1992 | 8 | 0 |
| 1993 | 20 | 0 |
| 1994 | 33 | 0 |
| 1995 | 18 | 0 |
| 1996 | 27 | 0 |
| 1997 | 16 | 0 |
| 1998 | 32 | 0 |
| 1999 | 23 | 0 |
| 2000 | 25 | 0 |
| 2001 | 20 | 13 |
| 2002 | 26 | 24 |
| 2003 | 32 | 41 |
| 2004 | 28 | 55 |
| 2005 | 31 | 60 |
| 2006 | 54 | 53 |
| 2007 | 32 | 62 |
| 2008 | 46 | 63 |
| 2009 | 37 | 48 |
| 2010 | 59 | 57 |
| 2011 | 54 | 65 |
| 2012 | 50 | 62 |
| 2013 | 41 | 40 |
| 2014 | 43 | 30 |
| 2015 | 49 | 37 |
| 2016 | 35 | 23 |
| 2017 | 28 | 29 |
| 2018 | 27 | 35 |
| 2019 | 46 | 34 |
| 2020 | 25 | 34 |
| 2021 | 21 | 52 |
| 2022 | 22 | 32 |
| 2023 | 26 | 44 |
| 2024 | 36 | 30 |
| 2025 | 24 | 30 |
| 2026 | 13 | 13 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H01S 5/3213Asymmetric clading layers320
- H01S 5/3216Quantum well or superlattice cladding layers217
- H01S 5/3215Graded composition cladding layers126
- H01S 5/3214Comprising materials from other groups of the periodic table than the materials80
- H01S 5/3218Specially strained cladding layers, other than for strain compensation37
- H01S 5/3219Explicitly al-free cladding layers27
Recent patents
- Techniques for laser alignment in photonic integrated circuits23 Jun 2026US 12,665,382 B2MACOM Technology Solutions Holdings, Inc.
- Surface emitting laser16 Jun 2026US 12,658,675 B2Sony Semiconductor Solutions Corporation
- Strain-engineered cladding layer for optimized active region strain and improved laser diode performance19 May 2026US 12,633,725 B2nLIGHT, Inc.
- Semiconductor optical device19 May 2026US 12,633,727 B2NTT, Inc.
- Phosphor structures31 Mar 2026US 12,592,547 B2KYOCERA SLD Laser, Inc.
- Two-dimensional periodically index-coupled fabry perot laser ("2d pic-fl")27 Aug 2026US 2026/0254200 A1
- Two-dimensional photonic crystal laser13 Aug 2026US 2026/0237965 A1Kyoto University
- Ultraviolet laser diode on a nano-porous aluminum gallium nitride template6 Aug 2026US 2026/0229837 A1The Regents of the University of California
- Optical semiconductor device6 Aug 2026US 2026/0229850 A1Lumentum Operations LLC
- Surface emitting laser devices and methods for manufacturing same30 Jul 2026US 2026/0221722 A1Vector Photonics Limited
Most cited
By later US patents
- Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device643US 6,153,010 ANichia Chemical Industries, Ltd. · 2000
- Nitride based semiconductor device489US 7,084,420 B2Samsung Electro-Mechanics Co., Ltd. · 2006
- Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same357US 5,679,965 ANorth Carolina State University · 1997
- Nitride semiconductor light-emitting and light-receiving devices282US 6,172,382 B2Nichia Chemical Industries, Ltd. · 2001
- Optical semiconductor device with diffraction grating structure249US 5,926,493 ASDL, Inc. · 1999