Nitride semiconductor light-emitting and light-receiving devices
AssigneeNichia Chemical Industries, Ltd.
InventorsShinichi Nagahama, Masayuki Senoh, Shuji Nakamura
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Abstract
A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.
Claims7
A nitride semiconductor light emitting device comprising a n-type cladding layer, a p-type cladding layer and an active layer including a first nitride semiconductor layer containing In between said n-side cladding layer and said p-side cladding layer, wherein said n-side cladding layer is a super lattice structure layer comprising first nitride semiconductor layers and second nitride semiconductor layers containing Al and has a total thickness of not less than 0.5 μm wherein an average composition of Al in said n-side cladding layer is set in a way that the product of said average Al composition in % contained in said n-side cladding layer multiplied by the thickness in μm of said n-side cladding layer is 4.4 or more.
Dependencies are inferred from the claim text.