Surface emitting laser
AssigneeSony Semiconductor Solutions Corporation
InventorTakahiro Arakida
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Abstract
The present technology provides a surface emitting laser capable of reducing a voltage drop at a tunnel junction. The present technology provides a surface emitting laser including: first and second multilayer film reflectors (102, 112) laminated together; a plurality of active layers laminated together between the first and second multilayer film reflectors (102, 112); and a tunnel junction (107) disposed between first and second active layers (104, 110) adjacent to each other in a lamination direction among the plurality of active layers, in which the tunnel junction (107) includes an n-type semiconductor layer (107b) and a p-type semiconductor layer (107a) laminated together, and the p-type semiconductor layer (107a) includes first and second p-type semiconductor regions (107a1, 107a2) laminated together.
Claims16
A surface emitting laser comprising:
- first and second multilayer film reflectors;
- a plurality of active layers laminated together between the first and second multilayer film reflectors;
- and
- a tunnel junction disposed between first and second active layers adjacent to each other in a lamination direction among the plurality of active layers,
- wherein the tunnel junction includes an n-type semiconductor layer and a p-type semiconductor layer laminated together, and
- the p-type semiconductor layer includes first and second p-type semiconductor regions laminated together.
Dependencies are inferred from the claim text.