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US 12,633,727 B2Granted
Semiconductor optical device
AssigneeNTT, Inc.
InventorsTakuro Fujii, Shinji Matsuo, Takuma Tsurugaya
Life of this patent
Estimating the term…
Abstract
There are included: a second semiconductor layer of a second conduction-type formed to be on and in contact with the active layer; and a third semiconductor layer of a second conduction-type formed on the second semiconductor layer, the third semiconductor layer is arranged above a formation region of the active layer, a bottom surface of the third semiconductor layer is arranged in the formation region of the active layer, and a width of the third semiconductor layer, on the active layer side, in a direction perpendicular to a waveguide direction and parallel to a plane of a substrate is set to be smaller than a width of the active layer in the same direction.
Claims18
A semiconductor optical device comprising:
- a first low refractive index layer on a substrate, the first low refractive index layer having a lower refractive index than a semiconductor;
- a first semiconductor layer of a first conduction-type on the first low refractive index layer;
- an active layer on the first semiconductor layer;
- a second semiconductor layer of a second conduction-type on and in contact with the active layer, the second semiconductor layer forming a first ridge pattern with the active layer;
- a third semiconductor layer on the second semiconductor layer and above the active layer, the third semiconductor layer forming a second ridge pattern;
- a fourth semiconductor layer on the first semiconductor layer and being in contact with first lateral faces of the first ridge pattern, the fourth semiconductor layer being non-electroconductive;
- a fifth semiconductor layer on the first semiconductor layer and in contact with second lateral faces of the first ridge pattern, the fifth semiconductor layer being non-electroconductive;
- a second low refractive index layer on the fourth semiconductor layer, the second low refractive index layer having a lower refractive index than a semiconductor and being in contact with first lateral faces of the second ridge pattern;
- a third low refractive index layer on the fifth semiconductor layer, the third low refractive index layer having a lower refractive index than a semiconductor and being in contact with second lateral faces of the second ridge pattern;
- a first electrode formed directly on the first semiconductor layer and electrically connected to the first semiconductor layer;
- and
- a second electrode electrically connected to the third semiconductor layer, wherein a width of the third semiconductor layer, on the active layer side, in a width direction, which is perpendicular to a waveguide direction and parallel to a plane of the substrate, is smaller than a width of the active layer in the width direction.
9 more elements
A semiconductor optical device comprising:
- a first low refractive index layer on a substrate, the first low refractive index layer having a lower refractive index than a semiconductor;
- a first semiconductor layer of a first conduction-type on the first low refractive index layer;
- an active layer on the first semiconductor layer;
- a second semiconductor layer of a second conduction-type on and in contact with the active layer, the second semiconductor layer forming a first ridge pattern with the active layer;
- a third semiconductor layer on the second semiconductor layer and above the active layer, the third semiconductor layer forming a second ridge pattern;
- a fourth semiconductor layer on the first semiconductor layer and being in contact with first lateral faces of the first ridge pattern, the fourth semiconductor layer comprising i-type InP or InP doped with Fe;
- a fifth semiconductor layer on the first semiconductor layer and in contact with second lateral faces of the first ridge pattern, the fifth semiconductor layer comprising i-type InP or InP doped with Fe;
- a second low refractive index layer on the fourth semiconductor layer, the second low refractive index layer having a lower refractive index than a semiconductor and being in contact with first lateral faces of the second ridge pattern;
- a third low refractive index layer on the fifth semiconductor layer, the third low refractive index layer having a lower refractive index than a semiconductor and being in contact with second lateral faces of the second ridge pattern;
- a first electrode formed directly on the first semiconductor layer and electrically connected to the first semiconductor layer;
- and
- a second electrode electrically connected to the third semiconductor layer, wherein a width of the third semiconductor layer, on the active layer side, in a width direction, which is perpendicular to a waveguide direction and parallel to a plane of the substrate, is smaller than a width of the active layer in the width direction.
9 more elements
A semiconductor optical device comprising:
- a first low refractive index layer on a substrate, the first low refractive index layer having a lower refractive index than a semiconductor;
- a first semiconductor layer of a first conduction-type on the first low refractive index layer;
- an active layer on the first semiconductor layer;
- a second semiconductor layer of a second conduction-type on and in contact with the active layer;
- a third semiconductor layer on the second semiconductor layer and above the active layer, the third semiconductor layer forming a ridge pattern;
- a second low refractive index layer on the second semiconductor layer, the second low refractive index layer having a lower refractive index than a semiconductor and being in contact with first lateral faces of the ridge pattern of the third semiconductor layer;
- a third low refractive index layer on the second semiconductor layer, the third low refractive index layer having a lower refractive index than a semiconductor and being in contact with second lateral faces of the ridge pattern of the third semiconductor layer;
- a first electrode formed directly on the first semiconductor layer and electrically connected to the first semiconductor layer;
- a second electrode electrically connected to the third semiconductor layer;
- and
- a core buried in the first low refractive index layer in a region below the active layer, wherein
- a width of the third semiconductor layer, on the active layer side, in a width direction, which is perpendicular to a waveguide direction and parallel to a plane of the substrate, is smaller than a width of the active layer in the width direction.
9 more elements
A semiconductor optical device comprising:
- a first low refractive index layer on a substrate, the first low refractive index layer having a lower refractive index than a semiconductor;
- a first semiconductor layer of a first conduction-type on the first low refractive index layer;
- an active layer on the first semiconductor layer;
- a second semiconductor layer of a second conduction-type on and in contact with the active layer;
- a third semiconductor layer on the second semiconductor layer and above the active layer, the third semiconductor layer forming a ridge pattern;
- a second low refractive index layer on the second semiconductor layer, the second low refractive index layer having a lower refractive index than a semiconductor and being in contact with first lateral faces of the ridge pattern of the third semiconductor layer;
- a third low refractive index layer on the second semiconductor layer, the third low refractive index layer having a lower refractive index than a semiconductor and being in contact with second lateral faces of the ridge pattern of the third semiconductor layer;
- a first electrode formed directly on the first semiconductor layer and electrically connected to the first semiconductor layer;
- a second electrode electrically connected to the third semiconductor layer;
- and
- a diffraction grating buried in the first low refractive index layer in a region below the active layer, wherein
- a width of the third semiconductor layer, on the active layer side, in a width direction, which is perpendicular to a waveguide direction and parallel to a plane of the substrate, is smaller than a width of the active layer in the width direction.
9 more elements
Dependencies are inferred from the claim text.