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US 2026/0229837 A1Published application
Ultraviolet laser diode on a nano-porous aluminum gallium nitride template
AssigneeThe Regents of the University of California
InventorsYifan Yao, Matthew S. Wong, Michael Iza, Shuji Nakamura, Steven P. DenBaars
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Abstract
A III-nitride laser diode with an emission wavelength between 300 nin and 370 nm grown on or above a nano-porous AlaGa1-aN (0<a≤1) layer, which is grown on or above a GaN substrate.
Claims18
A device, comprising:
- a III-nitride laser diode with an emission wavelength between 300 nm and 370 nm, grown on or above a nano-porous AlaGa1-aN layer, where 0<a≤1, and the nano-porous AlaGa1-aN layer is grown on or above a III-nitride substrate.
A method, comprising:
- fabricating a III-nitride laser diode with an emission wavelength between 300 nm and 370 nm, grown on or above a nano-porous AlaGa1-aN layer, where 0<a≤1, and the nano-porous AlaGa1-aN layer is grown on or above a III-nitride substrate.
Dependencies are inferred from the claim text.