H01S 5/3218
Specially strained cladding layers, other than for strain compensation
Official title: {specially strained cladding layers, other than for strain compensation}
H01S5/3218 (Specially strained cladding layers, other than for strain compensation) appears on 37 US grants and 22 published applications in this corpus.
Search patents in H01S- Granted patents
- 37
- Published applications
- 22
- Assignees
- 25
- Inventors
- 79
- Latest grant
- 19 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 5 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 1 |
| 2003 | 0 | 0 |
| 2004 | 1 | 1 |
| 2005 | 0 | 0 |
| 2006 | 1 | 2 |
| 2007 | 1 | 1 |
| 2008 | 1 | 2 |
| 2009 | 1 | 2 |
| 2010 | 0 | 1 |
| 2011 | 4 | 1 |
| 2012 | 0 | 1 |
| 2013 | 1 | 0 |
| 2014 | 1 | 2 |
| 2015 | 2 | 0 |
| 2016 | 0 | 0 |
| 2017 | 1 | 1 |
| 2018 | 2 | 1 |
| 2019 | 4 | 2 |
| 2020 | 1 | 1 |
| 2021 | 1 | 1 |
| 2022 | 1 | 1 |
| 2023 | 0 | 1 |
| 2024 | 0 | 0 |
| 2025 | 1 | 0 |
| 2026 | 1 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Strain-engineered cladding layer for optimized active region strain and improved laser diode performance19 May 2026US 12,633,725 B2nLIGHT, Inc.
- Light-emitting device14 Oct 2025US 12,444,907 B2Epistar Corporation
- Mid-infrared vertical cavity laser29 Mar 2022US 11,289,876 B2Praevium Research, Inc.
- Structure comprising a strained semiconductor layer on a heat sink2 Nov 2021US 11,165,220 B2Centre National De La Recherche Scientifique
- Mid-infrared vertical cavity laser14 Jul 2020US 10,714,893 B2Praevium Research, Inc.
- Light-emitting device19 Oct 2023US 2023/0335975 A1Epistar Corporation
- Strain-engineered cladding layer for optimized active region strain and improved laser diode performance17 Nov 2022US 2022/0368108 A1nLIGHT, Inc.
- Structure comprising a strained semiconductor layer on a heat sink22 Apr 2021US 2021/0119416 A1Centre National De La Recherche Scientifique
- Mid-infrared vertical cavity laser29 Oct 2020US 2020/0343687 A1Praevium Research, Inc.
- Nitride semiconductor laser device16 May 2019US 2019/0148917 A1Sharp Kabushiki Kaisha
Most cited
By later US patents
- Vertical-cavity, surface-emission type laser diode and fabrication process thereof63US 6,674,785 B2Ricoh Company, Ltd. · 2004
- Light emitting device having a defect inhibition layer33US 5,838,705 AMotorola, Inc. · 1998
- Strained superlattice semiconductor structure30US 5,181,086 AMitsubishi Denki Kabushiki Kaisha · 1993
- Semiconductor laser26US 5,408,487 AFujitsu Limited · 1995
- Semiconductor layer structure with superlattice26US 7,893,424 B2OSRAM Opto Semiconductors GmbH · 2011