Nitride semiconductor laser device
AssigneeSharp Kabushiki Kaisha
InventorsSATOSHI KOMADA, YUHZOH TSUDA
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Abstract
A nitride semiconductor laser device sequentially includes, between a nitride semiconductor substrate and an n-side cladding layer, a first nitride semiconductor layer formed of an AlGaN layer, a second nitride semiconductor layer that is formed of an AlGaN layer and has a lower Al content than the first nitride semiconductor layer, a third nitride semiconductor layer formed of a GaN layer, a fourth nitride semiconductor layer formed of an InGaN layer, and a fifth nitride semiconductor layer formed of an AlGaN layer.
Claims7
A nitride semiconductor laser device including an n-side cladding layer, an active layer, and a p-side cladding layer disposed on a nitride semiconductor substrate, the nitride semiconductor laser device comprising, between the nitride semiconductor substrate and the n-side cladding layer sequentially from the nitride semiconductor substrate:
- a first nitride semiconductor layer containing AlGaN;
- a second nitride semiconductor layer containing AlGaN and having a lower Al content than the first nitride semiconductor layer;
- a third nitride semiconductor layer containing GaN;
- a fourth nitride semiconductor layer containing InGaN;
- and
- a fifth nitride semiconductor layer containing AlGaN.
Dependencies are inferred from the claim text.