Structure comprising a strained semiconductor layer on a heat sink
AssigneesSTMicroelectronics (Crolles 2) SAS, Universite Paris-Saclay, Centre National De La Recherche Scientifique
InventorsAnas Elbaz, Moustafa El Kurdi, Abdelhanin Aassime, Philippe Boucaud, Frederic Boeuf
Life of this patent
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Abstract
A structure includes a semiconductor support, a semiconductor region overlying the semiconductor support, a silicon nitride layer surrounding and straining the semiconductor region, and a metal foot separating the silicon nitride layer from the semiconductor support. The semiconductor region includes germanium. The semiconductor region can be a resonator of a laser or a waveguide.
Claims24
A structure comprising:
- a semiconductor support;
- a semiconductor region overlying the semiconductor support, the semiconductor region comprising germanium;
- a silicon nitride layer surrounding and straining the semiconductor region;
- and
- a metal foot separating the silicon nitride layer from the semiconductor support, wherein, in a top view of the structure, the metal foot has a smaller size than the semiconductor region.
A structure comprising:
- a semiconductor support;
- a semiconductor region overlying the semiconductor support, the semiconductor region comprising germanium;
- a silicon nitride layer surrounding and straining the semiconductor region;
- and
- a metal foot separating the silicon nitride layer from the semiconductor support, wherein the metal foot is made of aluminum or of a compound of aluminum and of silicon.
A structure comprising:
- a semiconductor support;
- a semiconductor region overlying the semiconductor support, the semiconductor region comprising elemental germanium, germanium-tin, or silicon-germanium-tin, wherein the semiconductor region comprises a resonator of a laser or a waveguide;
- a silicon nitride layer surrounding and straining the semiconductor region;
- a metal foot separating the silicon nitride layer from the semiconductor support, the metal foot comprising aluminum;
- and
- a stack of bonding layers bonding the metal foot to the semiconductor support.
A method of manufacturing a structure comprising:
- forming a stack of layers successively on a surface of a first semiconductor support, the stack of layers comprising a semiconductor region comprising germanium, a first silicon nitride layer, and a metal layer straining the first silicon nitride layer;
- bonding a surface of a second semiconductor support to the metal layer;
- separating the stack from the first support;
- selectively etching the metal layer to decrease its width with respect to a lateral dimension of the first silicon nitride layer;
- and
- isotropically depositing a second silicon nitride layer on the semiconductor region.
Dependencies are inferred from the claim text.