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US 6,674,785 B2Granted
Vertical-cavity, surface-emission type laser diode and fabrication process thereof
AssigneeRicoh Company, Ltd.
InventorsShunichi Sato, Takashi Takahashi, Naoto Jikutani, Morimasa Kaminishi, Akihiro Itoh
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Abstract
A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.
Claims17
A vertical-cavity, surface-emission-type laser diode comprising:
- a semiconductor substrate;
- and
- an optical cavity structure provided on or above said semiconductor substrate,
- said optical-cavity structure comprising an active region containing at least one active layer that produces a laser beam, and upper and lower reflectors sandwiching said active region to form said optical cavity,
- said lower reflector including a semiconductor distributed Bragg reflector having a refractive index that changes periodically, said lower reflector reflecting an optical beam incident thereto by diffraction,
- said semiconductor distributed Bragg reflector comprising a low-refractive-index layer of AlxGa1-xAs (0<x≦1) and a high-refractive-index layer of AlyGa1-yAs (0≦y<x≦1),
- wherein a non-optical recombination elimination layer is provided between said active layer and said lower reflector including an interface between said lower reflector and said active region.
4 more elements
A vertical-cavity, surface-emission-type laser-diode array comprising,
- a plurality of vertical-cavity, surface-emission-type laser diodes, each of said vertical-cavity, surface-emission-type laser diodes comprising a GaAs semiconductor substrate and an optical cavity structure provided on or above said semiconductor substrate, said optical-cavity structure comprising an active region containing at least one active layer that produces a laser beam, and upper and lower reflectors sandwiching said active region to form said optical cavity, said lower reflector including a semiconductor distributed Bragg reflector having a refractive index that changes periodically and reflecting an optical beam incident thereto by diffraction, said semiconductor distributed Bragg reflector comprising a low-refractive-index layer of AlxGa1-xAs (0<x≦1) and a high-refractive-index layer of AlyGa1-yAs (0≦y<x≦1), a non-optical recombination elimination layer of GaxIn1-xPyAs1-y (0<x≦1, 0<y≦1) being provided between said active layer and said lower reflector.
An optical transmission module having a vertical-cavity, surface-emission-type laser diode as an optical source, said vertical-cavity, surface-emission-type laser diode comprising:
- a semiconductor substrate;
- and
- an optical cavity structure on or above said semiconductor substrate,
- said optical-cavity structure comprising an active region containing at least one active layer that produces a laser beam, and upper and lower reflectors sandwiching said active region to form said optical cavity,
- said lower reflector including a semiconductor distributed Bragg reflector having a refractive index that changes periodically, said lower reflector reflecting an optical beam incident thereto by diffraction,
- said semiconductor distributed Bragg reflector comprising a low-refractive-index layer of AlxGa1-xAs (0<x≦1) and a high-refractive-index layer of AlyGa1-yAs (0≦y<x≦1),
- wherein a non-optical recombination elimination layer is provided between said active layer and said lower reflector.
4 more elements
An optical transmission module having a vertical-cavity, surface-emission-type laser-diode array as an optical source, said vertical-cavity, surface-emission-type laser-diode array comprising:
- a plurality of vertical-cavity, surface-emission-type laser diodes,
- each of said vertical-cavity, surface-emission-type laser diodes comprising a GaAs semiconductor substrate and an optical cavity structure provided on or above said semiconductor substrate, said optical-cavity structure comprising an active region containing at least one active layer that produces a laser-beam, and upper and lower reflectors sandwiching said active region to form said optical cavity, said lower reflector including a, semiconductor distributed Bragg reflector having a refractive index that changes periodically and reflecting an optical beam incident thereto by diffraction, said semiconductor distributed Bragg reflector comprising a low-refractive-index layer of AlxGa1-xAs (0<x≦1) and a high-refractive-index layer of AlyGa1-yAs (0≦y<x≦1), a non-optical recombination elimination layer of GaxIn1-xPyAs1-y (0<x≦1, 0<y≦1) being provided between said active layer and said lower reflector.
An optical transceiver module having a vertical-cavity, surface-emission-type laser diode as an optical source, said vertical-cavity, surface-emission-type laser diode comprising:
- a semiconductor substrate;
- and
- an optical cavity structure on or above said semiconductor substrate,
- said optical-cavity structure comprising an active region containing at least one active layer that produces a laser beam, and upper and lower reflectors sandwiching said active region to form said optical cavity,
- said lower reflector including a semiconductor distributed Bragg reflector having a refractive index that changes periodically, said lower reflector reflecting an optical beam incident thereto by diffraction,
- said semiconductor distributed Bragg reflector comprising a low-refractive-index layer of AlxGa1-xAs (0<x≦1) and a high-refractive-index layer of AlyGa1-yAs (0≦y<x≦1),
- wherein a non-optical recombination elimination layer is provided between said active layer and said lower reflector.
4 more elements
An optical transceiver module having a vertical-cavity, surface-emission-type laser-diode array as an optical source, said vertical-cavity, surface-emission-type laser-diode array comprising:
- a plurality of vertical-cavity, surface-emission-type laser diodes,
- each of said vertical-cavity, surface-emission-type laser diodes comprising a GaAs semiconductor substrate and an optical cavity structure provided on or above said semiconductor substrate, said optical-cavity structure comprising an active region containing at least one active layer that produces a laser beam, and upper and lower reflectors sandwiching said active region to form said optical cavity, said lower reflector including a semiconductor distributed Bragg reflector having a refractive index that changes periodically and reflecting an optical beam incident thereto by diffraction, said semiconductor distributed Bragg reflector comprising a low-refractive-index layer of AlxGa1-xAs (0<x≦1) and a high-refractive-index layer of AlyGa1-yAs (0≦y<x≦1), a non-optical recombination elimination layer of GaxIn1-xPyAs1-y (0<x≦1, 0<y≦1) being provided between said active layer and said lower reflector.
An optical telecommunication system having a vertical-cavity, surface-emission-type laser diode as an optical source, said vertical-cavity, surface-emission-type laser diode comprising:
- a semiconductor substrate;
- and
- an optical cavity structure on or above said semiconductor substrate,
- said optical-cavity structure comprising an active region containing at least one active layer that produces a laser beam, and upper and lower reflectors sandwiching said active region to form said optical cavity,
- said lower reflector including a semiconductor distributed Bragg reflector having a refractive index that changes periodically, said lower reflector reflecting an optical beam incident thereto by diffraction,
- said semiconductor distributed Bragg reflector comprising a low-refractive-index layer of AlxGa1-xAs (0<x≦1) and a high-refractive-index layer of AlyGa1-yAs (0≦y<x≦1),
- wherein a non-optical recombination elimination layer is provided between said active layer and said lower reflector.
4 more elements
An optical telecommunication system having a vertical-cavity, surface-emission-type laser-diode array as an optical source, said vertical-cavity, surface-emission-type laser-diode array comprising:
- a plurality of vertical-cavity, surface-emission-type laser diodes,
- each of said vertical-cavity, surface-emission-type laser diodes comprising a GaAs semiconductor substrate and an optical cavity structure provided on or above said semiconductor substrate, said optical-cavity structure comprising an active region containing at least one active layer that produces a laser beam, and upper and lower reflectors sandwiching said active region to form said optical cavity, said lower reflector including a semiconductor distributed Bragg reflector having a refractive index that changes periodically and reflecting an optical beam incident thereto by diffraction, said semiconductor distributed Bragg reflector comprising a low-refractive-index layer of AlxGa1-xAs (0<x≦1) and a high-refractive-index layer of AlyGa1-yAs (0≦y<x≦1), a non-optical recombination elimination layer of GaxIn1-xPyAs1-y (0<x≦1, 0<y≦1) being provided between said active layer and said lower reflector.
Dependencies are inferred from the claim text.