H01S 5/3219
Explicitly al-free cladding layers
Official title: {explicitly Al-free cladding layers}
H01S5/3219 (Explicitly al-free cladding layers) appears on 27 US grants and 17 published applications in this corpus.
Search patents in H01S- Granted patents
- 27
- Published applications
- 17
- Assignees
- 12
- Inventors
- 32
- Latest grant
- 30 Dec 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2000 | 1 | 0 |
| 2001 | 1 | 0 |
| 2002 | 4 | 3 |
| 2003 | 1 | 1 |
| 2004 | 1 | 1 |
| 2005 | 1 | 1 |
| 2006 | 1 | 2 |
| 2007 | 1 | 2 |
| 2008 | 1 | 0 |
| 2009 | 1 | 2 |
| 2010 | 1 | 0 |
| 2011 | 2 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 1 |
| 2015 | 1 | 0 |
| 2016 | 2 | 1 |
| 2017 | 1 | 0 |
| 2018 | 2 | 2 |
| 2019 | 3 | 0 |
| 2020 | 1 | 0 |
| 2021 | 0 | 0 |
| 2022 | 0 | 1 |
| 2023 | 0 | 0 |
| 2024 | 0 | 0 |
| 2025 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Semiconductor device30 Dec 2025US 12,512,647 B2Mitsubishi Electric Corporation
- Method and device concerning III-nitride edge emitting laser diode of high confinement factor with lattice matched cladding layer4 Feb 2020US 10,554,017 B2Yale University
- Edge-emitting laser having small vertical emitting angle31 Dec 2019US 10,522,974 B2TrueLight Corporation
- Epitaxial growth of cladding regions for a gallium and nitrogen containing laser diode8 Oct 2019US 10,439,365 B1Soraa Laser Diode, Inc.
- Epitaxial growth of cladding regions for a gallium and nitrogen containing laser diode21 May 2019US 10,297,979 B1Soraa Laser Diode, Inc.
- Semiconductor device25 Aug 2022US 2022/0271509 A1Mitsubishi Electric Corporation
- Edge-emitting laser having small vertical emitting angle20 Dec 2018US 2018/0366908 A1TrueLight Corporation
- A method and device concerning iii-nitride edge emitting laser diode of high confinement factor with lattice matched cladding layer31 May 2018US 2018/0152003 A1Yale University
- Method for manufacturing optical semiconductor device15 Sep 2016US 2016/0268768 A1Mitsubishi Electric Corporation
- Semiconductor optical element4 Dec 2014US 2014/0355636 A1Hitachi, Ltd.
Most cited
By later US patents
- semiconductor light emitting devices72US 6,072,196 ARicoh Company, Ltd. · 2000
- Optical semiconductor device having an active layer containing N68US 6,233,264 B1Ricoh Company, Ltd. · 2001
- Vertical-cavity, surface-emission type laser diode and fabrication process thereof63US 6,674,785 B2Ricoh Company, Ltd. · 2004
- Optical semiconductor device having an active layer containing N20US 6,449,299 B1Ricoh Company, Ltd. · 2002
- Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure18US 7,751,455 B2Palo Alto Research Center Incorporated · 2010