Back to results
US 6,449,299 B1Granted
Optical semiconductor device having an active layer containing N
AssigneeRicoh Company, Ltd.
InventorShunichi Sato
Life of this patent
Estimating the term…
Abstract
A laser diode includes a substrate, a lower cladding layer or a lower optical waveguide layer substantially free from Al and provided on the substrate, an active layer of a mixed crystal containing Ga and In as a group III element and N, As and/or P as a group V element, provided on the lower cladding layer; and an upper cladding layer or an upper optical waveguide layer substantially free from Al and provided on the active layer.
Claims34
A semiconductor device, comprising:
- a GaAs substrate;
- an active layer of a GaInNPAs system formed over said GaAs substrate, said active layer having a composition represented as GaaIn1-aNbAscP1-b-c (0≦a≦1, 0<b<1, 0≦c<1) and containing at least Ga, In, N and As;
- and
- another layer formed adjacent to said active layer at either one side or both sides thereof, said another layer having a composition represented as GadIn1-dNeAsfP1-e-f (0≦d≦1, 0≦e<1, 0≦f≦1) excluding GaAs and selected from the group consisting of GaInPAs, GaInNPAs, GaInNAs, GaPAs, GaNPAs and GaNAs.
1 more element
A semiconductor device, comprising:
- a substrate;
- an active layer provided over said substrate, said active layer containing N and a group V element other than N;
- and
- another layer provided adjacent to said active layer at one side or both sides thereof,
- said another layer having a composition represented as GadIn1-dNeAsfP1-e-f (0≦d≦1, 0≦e<1, 0≦f≦1) excluding GaAs,
- said active layer and said another layer accumulating therein a strain of respective, different types;
- wherein said substrate is formed of GaAs.
4 more elements
An optical semiconductor device, comprising:
- a GaAs substrate;
- an active layer of a GaInNPAs system formed over said GaAs substrate, said active layer having a composition represented as GaaIn1-aNbAscP1-b-c (0≦a≦1, 0<b<1, 0≦c<1) and containing at least Ga, In, N and As;
- and
- another layer formed adjacent to said active layer at either one side or both sides thereof, said another layer having a composition represented as GadIn1-dNeAsfP1-e-f (0≦d≦1, 0≦e<1, 0≦f≦1) excluding GaAs and selected from the group consisting of GaInPAs, GaInNPAs, GaInNAs, GaPAs, GaNPAs and GaNAs.
1 more element
An optical semiconductor device, comprising:
- a substrate;
- an active layer provided over said substrate, said active layer containing N and a group V element other than N;
- and
- another layer provided adjacent to said active layer at one side or both sides thereof, said another layer having a composition represented as GadIn1-dNeAsfP1-e-f (0≦d≦1, 0≦e<1, 0≦f≦1) excluding GaAs,
- said active layer and said another layer accumulating therein a strain of respective different types;
- wherein said substrate is formed of GaAs.
3 more elements
An optical semiconductor device, comprising:
- a GaAs substrate;
- an active region provided over said GaAs substrate,
- said active region comprising at least a quantum well layer of a GaInNPAs system containing at least Ga, In, N and As and another layer contacting with said quantum well layer, said quantum well layer acting as a light-emitting layer,
- said another layer having a composition selected from the group consisting of GaInNPAs, GaInNAs, GaNPAs and GaNAs.
1 more element
An optical semiconductor device, comprising:
- a GaAs substrate;
- and
- an active region provided over said GaAs substrate, said active region comprising:
- a quantum well layer of a GaInNPAs system containing at least Ga, In, N and As, said quantum well layer acting as a light-emitting layer;
- and
- another layer contacting to said quantum well layer at one side or both sides of said quantum well layer, said another layer having a composition selected from the group consisting of GaInNPAs, GaInNAs, GaNPAs and GaNAs and functioning as a barrier layer.
3 more elements
An optical semiconductor device, comprising:
- a GaAs substrate;
- and
- an active region provided over said GaAs substrate, said active region comprising:
- a quantum well layer containing at least N and As as a group V element, said quantum well layer acting as a light-emitting layer;
- and
- another layer contacting to said quantum well layer at one side or both sides of said quantum well layer, said another layer acting as a barrier layer,
- said quantum well layer and said another layer accumulating therein a strain of respective, different types,
- said another layer having a composition represented as GadIn1-dNeAsfP1-e-f (0≦d≦1, 0≦e<1, 0≦f≦1) excluding GaAs.
5 more elements
An optical semiconductor device, comprising:
- a substrate;
- a lower cladding layer of a first conductivity type formed over said substrate;
- a lower optical waveguide layer formed over said lower cladding layer;
- an active region formed over said lower optical waveguide layer;
- an upper optical waveguide layer formed over said active region;
- an upper cladding layer of a second conductivity type formed over said upper optical waveguide layer,
- said active region being formed of a single layer of a compound semiconductor material in the system of GaInNPAs containing at least Ga, In, N and As,
- said lower and upper optical waveguide layers being selected from the group consisting of GaInPAs, GaInNPAs and GaInNAs,
- said lower and upper optical waveguide layers having a lattice-matching composition with respect to said substrate.
6 more elements
An optical semiconductor device, comprising:
- a substrate;
- a lower cladding layer of a first conductivity type formed over said substrate;
- a lower optical waveguide layer formed over said lower cladding layer;
- a lower barrier layer formed over said lower optical waveguide layer;
- an active layer formed over said barrier layer in direct and intimate contact therewith;
- an upper barrier layer formed over said active layer in direct and intimate contact therewith;
- an upper optical waveguide layer formed over said upper barrier layer;
- and
- an upper cladding layer of a second conductivity type formed over said upper optical waveguide layer,
- said active layer being formed of a compound semiconductor material in the system of GaInNPAs containing at least Ga, In, N and As;
- at least one of said lower and upper barrier layers being formed of a compound semiconductor material selected from the group consisting of GaInPAs, GaInNPAs, GaInNAs, GaPAs, GaNPAs and GaNAs.
8 more elements
An optical semiconductor device, comprising:
- a substrate;
- a lower cladding layer having a first conductivity type and formed over said substrate;
- a lower optical waveguide layer formed over said lower cladding layer;
- an active region having a multiple quantum well structure formed over said lower optical waveguide layer;
- an upper optical waveguide layer formed over said active layer;
- and
- an upper cladding layer of a second conductivity type formed over said upper optical waveguide layer;
- said active layer comprising an alternate and repetitive stacking of a barrier layer and a quantum well layer, said barrier layer having a bandgap larger than a bandgap of said quantum well layer and being formed of a compound semiconductor material selected from the group consisting of GaInPAs, GaInNPAs, GaInNAs, GaNPAs, GaNAs and GaPAs, said quantum well layer being formed of a compound semiconductor material of the system of GaInNPAs containing at least Ga, In, N and As.
5 more elements
Dependencies are inferred from the claim text.