A method and device concerning iii-nitride edge emitting laser diode of high confinement factor with lattice matched cladding layer
AssigneeYale University
InventorsJung Han, Yufeng Li, Ge Yuan
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Abstract
Edge-emitting laser diodes having high confinement factors and lattice-matched, porous cladding layers are described. The laser diodes may be formed from layers of III-nitride material. A cladding layer may be electrochemically etched to form a porous cladding layer having a high refractive index contrast with an active junction of the device. A transparent conductive oxide layer may be deposited to form a top-side cladding layer with high refractive index contrast and low resistivity.
Claims22
A semiconductor laser diode comprising an active region formed on a substrate and arranged for edge emission of a laser beam and a porous cladding layer formed between the substrate and the active region.
A method for making a semiconductor laser diode, the method comprising:
- forming an n+-doped GaN layer on a substrate;
- forming an active junction for and edge-emitting semiconductor laser diode adjacent to the n+-doped GaN layer;
- etching trenches through the active junction to expose a surface of the n+-doped GaN layer;
- and
- subsequently wet etching the n+-doped GaN layer to convert the n+-doped GaN layer to a porous cladding layer.
Dependencies are inferred from the claim text.