Semiconductor device
AssigneeMitsubishi Electric Corporation
InventorHiroyuki Kawahara
Life of this patent
Estimating the term…
Abstract
A semiconductor device according to the present application includes a semiconductor substrate, an n-type first cladding layer provided on the semiconductor substrate, an n-type second cladding layer provided on the first cladding layer, an active layer provided on the second cladding layer, a p-type third cladding layer provided on the active layer, a surface electrode provided above the third cladding layer, a back surface electrode provided below the semiconductor substrate and a p-type diffusion prevention layer provided between the first cladding layer and the second cladding layer.
Claims18
A semiconductor device, comprising:
- a semiconductor substrate;
- an n-type first cladding layer provided on the semiconductor substrate;
- an n-type second cladding layer provided on the first cladding layer;
- an active layer provided on the second cladding layer;
- a p-type third cladding layer provided on the active layer;
- a surface electrode provided above the third cladding layer;
- a back surface electrode provided below the semiconductor substrate;
- and
- a p-type diffusion prevention layer provided between the first cladding layer and the second cladding layer, wherein:
- the active layer is in direct contact with the n-type second cladding layer;
- and
- the p-type diffusion prevention layer is in direct contact with the n-type second cladding layer.
A semiconductor device, comprising:
- a semiconductor substrate;
- a first cladding layer of a first conductivity type which is provided on the semiconductor substrate;
- a second cladding layer of the first conductivity type which is provided on the first cladding layer;
- an active layer provided on the second cladding layer;
- a third cladding layer of a second conductivity type which is provided on the active layer;
- a surface electrode provided above the third cladding layer;
- a back surface electrode provided below the semiconductor substrate and provided over a region larger than the surface electrode;
- and
- a diffusion prevention layer of the second conductivity type which is provided between the first cladding layer and the second cladding layer, wherein:
- the active layer is in direct contact with the second cladding layer;
- and
- the diffusion prevention layer is in direct contact with the second cladding layer.
A semiconductor device comprising:
- a semiconductor substrate;
- a first cladding layer of a first conductivity type which is provided on the semiconductor substrate;
- a second cladding layer of the first conductivity type which is provided on the first cladding layer;
- an active layer provided on the second cladding layer;
- a third cladding layer of a second conductivity type which is provided on the active layer;
- a surface electrode provided above the third cladding layer;
- a back surface electrode provided below the semiconductor substrate and provided over a region larger than the surface electrode;
- a diffusion prevention layer of the second conductivity type which is provided between the first cladding layer and the second cladding layer;
- and
- a pn interface formed between the diffusion prevention layer and at least one of the first cladding layer and the second cladding layer.
A semiconductor device, comprising:
- a semiconductor substrate;
- a first cladding layer of a first conductivity type which is provided on the semiconductor substrate;
- a second cladding layer of the first conductivity type which is provided on the first cladding layer;
- a diffusion prevention layer of a second conductivity type which is provided between the first cladding layer and the second cladding layer;
- an active layer of the first conductivity type or the second conductivity type provided on the second cladding layer;
- a third cladding layer of the second conductivity type which is provided on the active layer;
- and
- an embedded layer having a same conductivity type as that of the active layer is formed on a side surface of the active layer.
Dependencies are inferred from the claim text.