US 2014/0355636 A1 · SEMICONDUCTOR OPTICAL ELEMENT

Abstract

In order to provide a highly reliable silicon-germanium semiconductor optical element of high luminous efficiency or of low power consumption that can reduce or prevent the occurrence of dislocations or crystal defects on the interface between a light emitting layer or a light absorption layer and a cladding layer, in a silicon-germanium semiconductor optical element, a germanium protective layer 11 of non-light emission is disposed between a germanium light emitting layer or the light absorption layer 10 and a cladding layer 12 disposed above a substrate. The germanium protective layer 11 has the electrical conductivity different from electrical conductivity of the germanium light emitting layer or the light absorption layer 10.

Claims16

Dependent claims

A semiconductor optical element comprising:

a semiconductor substrate;
a germanium light emitting layer or a germanium light absorption layer formed on the substrate;
and
an insulating film formed on the substrate,
wherein the semiconductor optical element includes a structure in which:
a germanium protective layer whose electrical conductivity is different from electrical conductivity of the light emitting layer or the light absorption layer is disposed above the light emitting layer or the light absorption layer;
a cladding layer whose electrical conductivity is the same as electrical conductivity of the protective layer is formed above the germanium protective layer;
and
an insulating layer is disposed on both side surfaces of the light emitting layer or the light absorption layer.

6 more elements

Dependencies are inferred from the claim text.

Semiconductor optical element

Life of this patent

Semiconductor optical element

Life of this patent

Abstract

Claims16