Epitaxial growth of cladding regions for a gallium and nitrogen containing laser diode

A method for fabricating a light emitting device configured as a Group III-nitride based laser device, the method comprising:

• providing a substrate member comprising a gallium and nitrogen containing material and a surface region with a gallium containing epitaxial material overlying the surface region;
• forming a first p-type (Al,In,Ga)N waveguiding material overlying the gallium containing epitaxial material under a first predetermined process condition;
• maintaining the first predetermined process condition such that an environment during a growth of the first p-type (Al,In,Ga)N waveguiding material is substantially molecular N2 rich gas environment;
• maintaining a temperature ranging from 725 C to 925 C during the formation of the first p-type (Al,In,Ga)N waveguiding material;
• and
• forming a second p-type (Al,In,Ga)N waveguiding material overlying the gallium containing epitaxial material under a second predetermined process condition, wherein the second predetermined process condition is substantially free from molecular N2 gas.

A method for fabricating a light emitting device configured as a Group III-nitride based laser device, the method comprising:

• providing a substrate member comprising a gallium and nitrogen containing material and a surface region with a gallium containing epitaxial material overlying the surface region;
• forming a p-type (Al,In,Ga)N waveguiding material overlying the gallium containing epitaxial material under a predetermined process condition;
• and
• maintaining the predetermined process condition such that an environment surrounding a growth of the p-type (Al,In,Ga)N waveguiding material is substantially molecular N2 rich gas environment that is substantially free from molecular H2 gas, wherein the p-type (Al,In,Ga)N waveguiding material is formed using a trimethylgallium metallorganic precursor and/or a triethylgallium metallorganic precursor;
• and the predetermined process condition includes an ammonia containing species, and a ratio of the ammonia containing species to the substantially molecular N2 rich gas environment is greater than 1:5 but less than 2:3.