H01S 5/3214
Comprising materials from other groups of the periodic table than the materials
Official title: {comprising materials from other groups of the Periodic Table than the materials of the active layer, e.g. ZnSe claddings and GaAs active layer}
H01S5/3214 (Comprising materials from other groups of the periodic table than the materials) appears on 80 US grants and 79 published applications in this corpus.
Search patents in H01S- Granted patents
- 80
- Published applications
- 79
- Assignees
- 47
- Inventors
- 171
- Latest grant
- 7 Jan 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 1 |
| 2003 | 0 | 1 |
| 2004 | 1 | 2 |
| 2005 | 2 | 3 |
| 2006 | 2 | 0 |
| 2007 | 1 | 1 |
| 2008 | 0 | 1 |
| 2009 | 1 | 1 |
| 2010 | 2 | 3 |
| 2011 | 2 | 4 |
| 2012 | 2 | 1 |
| 2013 | 4 | 2 |
| 2014 | 3 | 3 |
| 2015 | 5 | 1 |
| 2016 | 3 | 3 |
| 2017 | 4 | 6 |
| 2018 | 3 | 10 |
| 2019 | 11 | 4 |
| 2020 | 6 | 6 |
| 2021 | 4 | 7 |
| 2022 | 5 | 6 |
| 2023 | 7 | 3 |
| 2024 | 5 | 3 |
| 2025 | 1 | 6 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Laser with perovskite gain layer7 Jan 2025US 12,191,631 B2University of Washington
- Method of manufacture for an ultraviolet emitting optoelectronic device22 Oct 2024US 12,126,143 B2KYOCERA SLD Laser, Inc.
- Nitride semiconductor structure, nitride semiconductor device, and method for fabricating the device24 Sep 2024US 12,100,936 B2Panasonic Intellectual Property Management Co., Ltd.
- Optical device17 Sep 2024US 12,095,227 B2Nippon Telegraph and Telephone Corporation
- Manufacturable devices formed on gallium and nitrogen material10 Sep 2024US 12,088,065 B2KYOCERA SLD Laser, Inc.
- Low noise non-resonant gain structure semiconductor lasers25 Jun 2026US 2026/0180287 A1Pavilion Integration Corporation
- Device and a method for modulation of an optical signal9 Oct 2025US 2025/0316949 A1Imec Vzw
- Cladding-less gan-based thin-film edge-emitting laser18 Sep 2025US 2025/0293484 A1The University of Hong Kong
- Semiconductor laser element21 Aug 2025US 2025/0266664 A1Nichia Corporation
- Light source comprising a resonant cavity with distributed feedback and method for manufacturing a such light source19 Jun 2025US 2025/0202197 A1
Most cited
By later US patents
- Semiconductor light-emitting device and method for manufacturing the same136US 7,132,691 B1Rohm Co., Ltd. · 2006
- Semiconductor device56US 6,878,962 B1Japan Science and Technology Corporation · 2005
- Manufacturable laser diode formed on C-plane gallium and nitrogen material48US 9,368,939 B2Soraa Laser Diode, Inc. · 2016
- Multi-layer structured nitride-based semiconductor devices38US 6,121,638 AKabushiki Kaisha Toshiba · 2000
- Manufacturable laser diode formed on C-plane gallium and nitrogen material33US 9,774,170 B2Soraa Laser Diode, Inc. · 2017