Method of manufacture for an ultraviolet emitting optoelectronic device

A method for fabricating an ultraviolet laser diode device operable at a wavelength of less than 365 nm and greater than 200 nm, the method comprising:

• providing substrate member comprising gallium and nitrogen, the substrate member comprising a surface region;
• forming an epitaxial material overlying the surface region, the epitaxial material comprising:
• an n-type buffer layer overlying the surface region, the n-type buffer layer comprising gallium and nitrogen,
• an epitaxially grown sacrificial layer overlying the n-type buffer layer, the sacrificial layer comprising indium, gallium, and nitrogen and selected to absorb light with photon energies less than a band gap energy of the substrate member,
• an n-type cladding region overlying the sacrificial layer, the n-type cladding region comprising aluminum, indium, gallium, and nitrogen,
• an active region overlying the n-type cladding region, the active region comprising aluminum, indium, gallium, and nitrogen, the active region having at least one quantum well and barrier layers, and
• a p-type cladding region overlying the active region, the p-type cladding region comprising aluminum, indium, gallium, and nitrogen,
• patterning the epitaxial material to form epitaxial mesa regions and expose the sacrificial layer;
• depositing a bond media on at least one of the epitaxial mesa regions;
• bonding the bond media on the at least one of the epitaxial mesa regions to a handle substrate;
• subjecting the sacrificial layer to an energy source to initiate release of the substrate member and transfer the at least one of the epitaxial mesa regions to the handle substrate;
• and
• processing the at least one of the epitaxial mesa regions to form the ultraviolet laser diode device,
• wherein the n-type cladding region comprises a plurality of layers of various compositions of AlTInSGa1-T-SN, where 1.0≥T≥0.0 and 0.2≥S≥0.0 and T+S≤1.