Semiconductor device
AssigneeJapan Science and Technology Corporation
InventorsMasashi Kawasaki, Hideo Ohno, Akira Ohtomo
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Abstract
The present invention provides a high quality thin film comparable to a bulk single crystal and providres a semiconductor device with superior characteristics. A channel layer 11, for example, is formed of a semiconductor such as zinc oxide ZnO or the like. A source 12, a drain 13, a gate 14 and a gate insulating layer 15 are formed on the channel layer 111 to form an FET. For a substrate 16, a proper material is selected depending on a thin film material of the channel layer 11 in consideration of compatibility of both lattice constants. For example, if ZnO is used for the semiconductor of the channel layer as a base material, ScAlMgO4 or the like can be used for the substrate 16.
Claims13
A semiconductor device comprising,
- a substrate for a basic structure containing
- (1) a material of formula LnABO4 or LnAO3(BO)n,
- wherein,
- Ln is a rare earth element,
- A is selected from the group consisting of Fe, Ga and Al;
- B is selected from the group consisting of Mn, Co, Fe, Zn, Cu, Mg, and Cd, or
- (2) a material of formula ScAIBeO4, ScBMgO4, ScBBeO4, or LnAO3(MgO)n
- wherein,
- Ln is a rare earth element,
- A is selected from the group consisting of Fe, Ga and Al and
- a semiconductor layer formed on said substrate,
- wherein said semiconductor layer is formed from a material comprising a group II metal oxide;
- wherein said semiconductor layer is formed on said substrate by depositing said semiconductor layer at temperatures from 350° C. to 600° C., so as to achieve high nitrogen doping concentration therein.
Dependencies are inferred from the claim text.