H01S 5/3215
Graded composition cladding layers
Official title: {graded composition cladding layers}
H01S5/3215 (Graded composition cladding layers) appears on 126 US grants and 113 published applications in this corpus.
Search patents in H01S- Granted patents
- 126
- Published applications
- 113
- Assignees
- 86
- Inventors
- 304
- Latest grant
- 16 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 4 | 0 |
| 1994 | 6 | 0 |
| 1995 | 0 | 0 |
| 1996 | 2 | 0 |
| 1997 | 3 | 0 |
| 1998 | 4 | 0 |
| 1999 | 2 | 0 |
| 2000 | 4 | 0 |
| 2001 | 6 | 3 |
| 2002 | 2 | 5 |
| 2003 | 5 | 9 |
| 2004 | 11 | 7 |
| 2005 | 5 | 6 |
| 2006 | 2 | 5 |
| 2007 | 5 | 10 |
| 2008 | 4 | 5 |
| 2009 | 5 | 4 |
| 2010 | 4 | 5 |
| 2011 | 4 | 6 |
| 2012 | 5 | 4 |
| 2013 | 3 | 2 |
| 2014 | 2 | 0 |
| 2015 | 2 | 3 |
| 2016 | 4 | 1 |
| 2017 | 1 | 1 |
| 2018 | 2 | 1 |
| 2019 | 5 | 5 |
| 2020 | 3 | 5 |
| 2021 | 4 | 8 |
| 2022 | 2 | 3 |
| 2023 | 1 | 2 |
| 2024 | 6 | 5 |
| 2025 | 3 | 4 |
| 2026 | 1 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Ultraviolet laser diode on a nano-porous aluminum gallium nitride template6 Aug 2026US 2026/0229837 A1The Regents of the University of California
- Surface emitting laser devices and methods for manufacturing same30 Jul 2026US 2026/0221722 A1Vector Photonics Limited
- Semiconductor laser element26 Mar 2026US 2026/0088590 A1Nichia Corporation
- Semiconductor structure with chirp layer19 Feb 2026US 2026/0052801 A1Silanna UV Technologies Pte Ltd
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Most cited
By later US patents
- Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same357US 5,679,965 ANorth Carolina State University · 1997
- Efficient semiconductor light-emitting device and method222US 5,493,577 ASandia Corporation · 1996
- Spatially coherent surface-emitting, grating coupled quantum cascade laser with unstable resonance cavity133US 6,560,259 B1Applied Optoelectronics, Inc. · 2003
- High efficiency VCSEL and method of fabrication85US 5,359,618 AMotorola, Inc. · 1994
- Compound semiconductor device based on gallium nitride75US 6,388,275 B1Sanyo Electric Co., Ltd. · 2002