H01S 5/3216
Quantum well or superlattice cladding layers
Official title: {quantum well or superlattice cladding layers}
H01S5/3216 (Quantum well or superlattice cladding layers) appears on 217 US grants and 204 published applications in this corpus.
Search patents in H01S- Granted patents
- 217
- Published applications
- 204
- Assignees
- 105
- Inventors
- 435
- Latest grant
- 24 Mar 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1988 | 4 | 0 |
| 1989 | 3 | 0 |
| 1990 | 0 | 0 |
| 1991 | 3 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 3 | 0 |
| 1997 | 3 | 0 |
| 1998 | 5 | 0 |
| 1999 | 2 | 0 |
| 2000 | 7 | 0 |
| 2001 | 4 | 5 |
| 2002 | 7 | 3 |
| 2003 | 5 | 7 |
| 2004 | 4 | 6 |
| 2005 | 5 | 8 |
| 2006 | 10 | 14 |
| 2007 | 3 | 17 |
| 2008 | 8 | 16 |
| 2009 | 9 | 7 |
| 2010 | 16 | 14 |
| 2011 | 12 | 9 |
| 2012 | 4 | 13 |
| 2013 | 11 | 7 |
| 2014 | 10 | 13 |
| 2015 | 16 | 9 |
| 2016 | 9 | 6 |
| 2017 | 10 | 4 |
| 2018 | 9 | 5 |
| 2019 | 11 | 4 |
| 2020 | 3 | 4 |
| 2021 | 5 | 10 |
| 2022 | 4 | 0 |
| 2023 | 5 | 9 |
| 2024 | 2 | 7 |
| 2025 | 2 | 4 |
| 2026 | 2 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Weak index guiding of interband cascade lasers24 Mar 2026US 12,586,987 B2The Government of the United States of America, as represented by the Secretary of the Navy
- Semiconductor laser device3 Feb 2026US 12,542,426 B2Mitsubishi Electric Corporation
- Semiconductor structure with chirp layer2 Dec 2025US 12,490,550 B2Silanna UV Technologies Pte Ltd
- Wavelength-variable laser10 Jun 2025US 12,327,983 B2Furukawa Electric Co., Ltd.
- Wavelength-variable laser11 Jun 2024US 12,009,636 B2Furukawa Electric Co., Ltd.
- Ultraviolet laser diode on a nano-porous aluminum gallium nitride template6 Aug 2026US 2026/0229837 A1The Regents of the University of California
- Semiconductor laser element26 Mar 2026US 2026/0088590 A1Nichia Corporation
- Semiconductor structure with chirp layer19 Feb 2026US 2026/0052801 A1Silanna UV Technologies Pte Ltd
- Cladding-less gan-based thin-film edge-emitting laser18 Sep 2025US 2025/0293484 A1The University of Hong Kong
- Wavelength-variable laser4 Sep 2025US 2025/0279629 A1Furukawa Electric Co., Ltd.
Most cited
By later US patents
- Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device643US 6,153,010 ANichia Chemical Industries, Ltd. · 2000
- Nitride based semiconductor device489US 7,084,420 B2Samsung Electro-Mechanics Co., Ltd. · 2006
- Nitride semiconductor light-emitting and light-receiving devices282US 6,172,382 B2Nichia Chemical Industries, Ltd. · 2001
- Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device72US 6,756,611 B2Nichia Chemical Industries, Ltd. · 2004
- Semiconductor laser using five-element compound semiconductor65US 5,042,043 AKabushiki Kaisha Toshiba · 1991