H01S 5/3206
Ordering or disordering the natural superlattice in ternary or quaternary materials
Official title: {ordering or disordering the natural superlattice in ternary or quaternary materials}
H01S5/3206 (Ordering or disordering the natural superlattice in ternary or quaternary materials) appears on 64 US grants and 34 published applications in this corpus.
Search patents in H01S- Granted patents
- 64
- Published applications
- 34
- Assignees
- 29
- Inventors
- 99
- Latest grant
- 2 Dec 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 6 | 0 |
| 1997 | 6 | 0 |
| 1998 | 4 | 0 |
| 1999 | 5 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 3 | 1 |
| 2003 | 3 | 2 |
| 2004 | 0 | 4 |
| 2005 | 2 | 2 |
| 2006 | 0 | 1 |
| 2007 | 2 | 1 |
| 2008 | 0 | 0 |
| 2009 | 3 | 0 |
| 2010 | 1 | 1 |
| 2011 | 0 | 0 |
| 2012 | 1 | 0 |
| 2013 | 1 | 0 |
| 2014 | 0 | 2 |
| 2015 | 1 | 1 |
| 2016 | 3 | 2 |
| 2017 | 1 | 2 |
| 2018 | 1 | 1 |
| 2019 | 1 | 1 |
| 2020 | 0 | 1 |
| 2021 | 4 | 5 |
| 2022 | 1 | 0 |
| 2023 | 5 | 4 |
| 2024 | 0 | 1 |
| 2025 | 3 | 1 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor structure with chirp layer2 Dec 2025US 12,490,550 B2Silanna UV Technologies Pte Ltd
- Epitaxial oxide materials, structures, and devices15 Apr 2025US 12,278,309 B2Silanna UV Technologies Pte Ltd
- Epitaxial oxide materials, structures, and devices11 Feb 2025US 12,224,378 B2Silanna UV Technologies Pte Ltd
- Semiconductor structure with chirp layer14 Nov 2023US 11,817,525 B2Silanna UV Technologies Pte Ltd
- Heterostructure for an optoelectronic device17 Oct 2023US 11,791,438 B2Sensor Electronic Technology, Inc.
- Semiconductor structure with chirp layer19 Feb 2026US 2026/0052801 A1Silanna UV Technologies Pte Ltd
- Epitaxial oxide materials, structures, and devices28 Aug 2025US 2025/0275302 A1Silanna UV Technologies Pte Ltd
- Semiconductor structure with chirp layer25 Jan 2024US 2024/0030375 A1Silanna UV Technologies Pte Ltd
- Broadened spectrum laser diode for display device7 Sep 2023US 2023/0283047 A1Microsoft Technology Licensing, LLC
- Epitaxial oxide materials, structures, and devices22 Jun 2023US 2023/0197794 A1Silanna UV Technologies Pte Ltd
Most cited
By later US patents
- Nitride semiconductor device200US 5,959,307 ANichia Chemical Industries, Ltd. · 1999
- Extended wavelength strained layer lasers having strain compensated layers53US 5,825,796 APicolight Incorporated · 1998
- Extended wavelength strained layer lasers having nitrogen disposed therein52US 5,719,894 APicolight Incorporated · 1998
- Method of manufacturing an ultraviolet light emitting AlGaN composition and ultraviolet light emitting device containing same51US 7,498,182 B1The United States of America as represented by the Secretary of the Army · 2009
- Extended wavelength strained layer lasers having strain compensated layers42US 5,960,018 APicolight Incorporated · 1999