H01S 5/3209
Disordered active layer
Official title: {disordered active layer}
H01S5/3209 (Disordered active layer) appears on 18 US grants and 15 published applications in this corpus.
Search patents in H01S- Granted patents
- 18
- Published applications
- 15
- Assignees
- 10
- Inventors
- 31
- Latest grant
- 17 Oct 2023
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1996 | 2 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 1 |
| 2004 | 0 | 0 |
| 2005 | 1 | 1 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 1 | 0 |
| 2010 | 1 | 1 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 1 | 0 |
| 2014 | 0 | 1 |
| 2015 | 0 | 0 |
| 2016 | 2 | 2 |
| 2017 | 1 | 2 |
| 2018 | 1 | 1 |
| 2019 | 1 | 1 |
| 2020 | 0 | 1 |
| 2021 | 3 | 3 |
| 2022 | 0 | 0 |
| 2023 | 2 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Heterostructure for an optoelectronic device17 Oct 2023US 11,791,438 B2Sensor Electronic Technology, Inc.
- Broadened spectrum laser diode for display device20 Jun 2023US 11,682,881 B2Microsoft Technology Licensing, LLC
- Laser diode6 Jul 2021US 11,056,857 B2OSRAM OLED GmbH
- Heterostructure for an optoelectronic device16 Mar 2021US 10,950,747 B2Sensor Electronic Technology, Inc.
- Semiconductor layer including compositional inhomogeneities16 Feb 2021US 10,923,623 B2Sensor Electronic Technology, Inc.
- Broadened spectrum laser diode for display device7 Sep 2023US 2023/0283047 A1Microsoft Technology Licensing, LLC
- Broadened spectrum laser diode for display device9 Sep 2021US 2021/0281043 A1Microsoft Technology Licensing, LLC
- Broadened spectrum laser diode for display device9 Sep 2021US 2021/0281047 A1Microsoft Technology Licensing, LLC
- Heterostructure for an Optoelectronic Device1 Jul 2021US 2021/0202791 A1Sensor Electronic Technology, Inc.
- Laser diode9 Jul 2020US 2020/0220330 A1OSRAM OLED GmbH
Most cited
By later US patents
- Method of manufacturing an ultraviolet light emitting AlGaN composition and ultraviolet light emitting device containing same51US 7,498,182 B1The United States of America as represented by the Secretary of the Army · 2009
- Semiconductor layer including compositional inhomogeneities28US 9,281,441 B2Sensor Electronic Technology, Inc. · 2016
- Ultraviolet light emitting AlGaN composition, and ultraviolet light emitting device containing same25US 7,812,366 B1The United States of America as represented by the Secretary of the Army · 2010
- Semiconductor laser10US 5,822,348 ANEC Corporation · 1998
- Semiconductor laser having a flat groove for selected crystal planes9US 5,546,418 AMatsushita Electric Industrial Co., Ltd. · 1996