Semiconductor layer including compositional inhomogeneities

A device, comprising:

• a semiconductor structure including an active region, wherein the active region comprises a multiple quantum well structure including:
• a plurality of barriers alternating with a plurality of quantum wells, wherein at least one of:
• a barrier in the plurality of barriers or a quantum well in the plurality of quantum wells includes a plurality of compositional inhomogeneous regions, wherein a difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer is greater than 26 meV, and wherein a characteristic size of each compositional inhomogeneous region is smaller than an inverse of a dislocation density for the semiconductor layer, and wherein the plurality of compositional inhomogeneous regions includes large scale compositional inhomogeneous regions and small scale compositional inhomogeneous regions, wherein the large scale compositional inhomogeneous regions are larger than a square of a characteristic distance between threading dislocations and the small scale compositional inhomogeneous regions are smaller than the square of the characteristic distance between the threading dislocations, wherein the at least one of the barrier or the at least one quantum well includes a first side and a second side, and wherein a distribution of the plurality of compositional inhomogeneous regions is graded, such that the first side has an average band gap higher than an average band gap of the second side.

A method, comprising:

• forming an active region of a semiconductor structure, wherein the active region comprises a light emitting heterostructure, the forming including:
• forming a plurality of barriers alternating with a plurality of quantum wells, wherein forming at least one of:
• a barrier in the plurality of barriers or a quantum well in the plurality of quantum wells includes forming a plurality of compositional inhomogeneous regions, wherein an average band gap for the plurality of compositional inhomogeneous regions exceeds 26 meV, and a characteristic size for each compositional inhomogeneous region is smaller than an inverse of a dislocation density, wherein the plurality of compositional inhomogeneous regions includes large scale compositional inhomogeneous regions and small scale inhomogeneous regions, wherein the large scale compositional inhomogeneous regions are larger than a square of a characteristic distance between threading dislocations and the small scale compositional inhomogeneous regions are smaller than the square of the characteristic distance between the threading dislocations, wherein the at least one barrier or the at least one quantum well includes a first side and a second side, and wherein a distribution of the plurality of compositional inhomogeneous regions is graded, such that the first side has an average band gap higher than an average band gap of the second side.