Semiconductor layer including compositional inhomogeneities

A device comprising:

• a semiconductor structure including an active region, wherein the active region comprises a multiple quantum well structure including:
• a plurality of barriers alternating with a plurality of quantum wells, wherein at least one of:
• a barrier in the plurality of barriers or a quantum well in the plurality of quantum wells includes a plurality of compositional inhomogeneous regions, wherein a difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer is at least 26 meV, and wherein a characteristic size of the plurality of compositional inhomogeneous regions is smaller than an inverse of a dislocation density for the semiconductor layer, wherein an average distance between the compositional inhomogeneous regions is less than an ambipolar diffusion length.

A method comprising:

• forming an active region of a semiconductor structure, wherein the active region comprises a light emitting heterostructure, the forming including:
• forming a plurality of barriers alternating with a plurality of quantum wells, wherein forming at least one of:
• a barrier in the plurality of barriers or a quantum well in the plurality of quantum wells includes forming a plurality of compositional inhomogeneous regions, wherein an average band gap for the plurality of compositional inhomogeneous regions exceeds 26 meV and a characteristic size for each compositional inhomogeneous region is smaller than an inverse of a dislocation density, wherein forming the plurality of compositional inhomogeneous regions includes grading a distribution of the plurality of compositional inhomogeneous regions.