Laser diode
AssigneeOSRAM OLED GmbH
InventorsChristoph Eichler, Matthias Peter, Jan Wagner
Life of this patent
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Abstract
A laser diode having a semiconductor layer sequence based on a nitride compound semiconductor material includes an n-type cladding layer, a first waveguide layer, a second waveguide layer and an active layer, and a p-type cladding layer including a first partial layer and a second partial layer, wherein the first partial layer includes Alx1Ga1-x1N with 0≤x1≤1 or Alx1Iny1Ga1-x1-y1N with 0≤x1≤1, 0≤y1<1 and x1+y1≤1, the aluminum content x1 decreases in a direction pointing away from the active layer so that the aluminum content has a maximum value x1max and a minimum value x1min<x1max, and the second partial layer includes Alx2Ga1-x2N with 0≤x2≤x1min or Alx2Iny2Ga1-x2-y2N with 0≤x2≤x1min, 0≤y2<1 and x2+y2≤1.
Claims18
A laser diode having a semiconductor layer sequence based on a nitride compound semiconductor material, comprising
- an n-type cladding layer,
- a first waveguide layer, a second waveguide layer and an active layer that generates laser radiation disposed between the first waveguide layer and the second waveguide layer, and
- a p-type cladding layer comprising a first partial layer facing the active layer and a second partial layer facing away from the active layer, wherein
- the first partial layer comprises Alx1Ga1-x1N with 0≤x1≤1 or Alx1Iny1Ga1-x1-y1N with 0≤x1≤1, 0≤y1<1 and x1+y1≤1,
- the aluminum content x1 decreases in a direction pointing away from the active layer so that the aluminum content has a maximum value x1max on a side facing the active layer and a minimum value x1min<x1max on a side remote from the active layer, and
- the second partial layer comprises Alx2Ga1-x2N with 0≤x2≤x1min or Alx2Iny2Ga1-x2-y2N with 0≤x2≤x1min, 0≤y2<1 and x2+y2≤1.
A laser diode having a semiconductor layer sequence based on a nitride compound semiconductor material, comprising
- an n-type cladding layer,
- a first waveguide layer, a second waveguide layer and an active layer that generates laser radiation disposed between the first waveguide layer and the second waveguide layer, and
- a p-type cladding layer comprising a first partial layer facing the active layer and a second partial layer facing away from the active layer, wherein
- the first partial layer comprises Alx1Ga1-x1N with 0≤x1≤1 or Alx1Iny1Ga1-x1-y1N with 0≤x1≤1, 0≤y1<1 and x1+y≤1,
- the aluminum content x1 decreases in a direction pointing away from the active layer so that the aluminum content has a maximum value x1max on a side facing the active layer and a minimum value x1min≤X1max on a side remote from the active layer,
- the second partial layer comprises Alx2Ga1-x2N with 0≤x2≤x1min or Alx2Iny2Ga1-x2-y2N with 0≤x2≤x1min, 0≤y2<1 and x2+y2≤1, and
- the dopant concentration in the second partial layer is higher or rises to a higher value at least in some areas than in the first partial layer.
Dependencies are inferred from the claim text.