Semiconductor laser having a flat groove for selected crystal planes
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsAkihiko Ishibashi, Isao Kidoguchi, Kiyoshi Ohnaka, Masaya Mannou
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Abstract
A semiconductor laser of the invention includes a (100) GaAs substrate having at least one stripe groove formed on an upper face thereof, and a semiconductor multilayer structure formed on the substrate. The stripe groove extends along a <1-10> direction. The semiconductor multilayer structure includes an Al.sub.x Ga.sub.1-x As layer (0.ltoreq.x.ltoreq.1) including a portion having a surface of an (a11) crystal plane (a>1), the portion being positioned on the stripe groove, a pair of AlGaInP cladding layers provided on the Al.sub.x Ga.sub.1-x As layer (0.ltoreq.x.ltoreq.1), and an active layer sandwiched between the pair of AlGaInP cladding layers.
Claims6
A semiconductor laser comprising:
- a (100) GaAs substrate having at least one stripe groove formed on an upper face thereof, and
- a semiconductor multilayer structure formed on the substrate,
- wherein the stripe groove extends along a <1-10>
- direction and has a flat portion at a bottom thereof, and the semiconductor multilayer structure includes:
- an Al.sub.x Ga.sub.1-x As layer (0.ltoreq.x.ltoreq.1) including a portion having a V-shaped top surface which is made of two adjoining (a11) crystal planes. (a>1), the portion being positioned on the stripe groove and having a flat bottom face on the flat portion of the stripe groove;
- a pair of AlGalnP cladding layers provided on the Al.sub.x Ga.sub.1-x As layer (0.ltoreq.x.ltoreq.1);
- and
- an active layer sandwiched between the pair of AlGaInP cladding layers.
A semiconductor laser comprising:
- a (100) GaAs substrate having at least one stripe groove formed on an upper face thereof;
- and
- a semiconductor multilayer structure formed on the substrate,
- wherein the stripe groove extends along a <1-10>
- direction and has a flat portion at a bottom thereof, and the semiconductor multilayer structure includes:
- an Al.sub.x Ga.sub.1-x As layer (0.ltoreq.x.ltoreq.1) including a portion having a V-shaped top surface which is made of two adjoining (a11) crystal planes (a>1), the portion being positioned on the stripe groove and having a flat bottom face on the flat portion of the stripe groove;
- an AlGaInP layer provided on the Al.sub.x Ga.sub.1-x As layer (0.ltoreq.x.ltoreq.1);
- a pair of cladding layers of II-I group semiconductors, provided on the AlGalnP layer;
- and
- an active layer sandwiched between the pair of cladding layers.
Dependencies are inferred from the claim text.