Broadened spectrum laser diode for display device

A laser diode emitter comprising:

• a substrate;
• and
• a first semiconductor layer deposited directly or indirectly on the substrate;
• a plurality of quantum well layers, each of the quantum well layers having a respective material composition to achieve a respective peak wavelength in emitted light when energized, each respective peak wavelength being different;
• and
• a second semiconductor layer deposited directly or indirectly on a topmost one of the quantum well layers, wherein
• when the laser diode emitter is energized, the plurality of quantum well layers collectively lase emitted light having a broader bandwidth than is emitted by any individual quantum well layer of the plurality of quantum well layers, and the emitted light includes the plurality of respective peak wavelengths across an emitted light frequency spectrum.

A method for use in manufacturing a laser diode emitter, the method comprising:

• forming a substrate;
• forming a first semiconducting layer of semiconducting material of a first type directly or indirectly on the substrate;
• depositing a quantum well layer directly or indirectly on the first semiconducting layer by epitaxial growth, the quantum well layer including at least first and second quantum well layer sections;
• forming a second semiconducting layer of a second type of semiconducting material directly or indirectly on the quantum well layer;
• depositing a strain inducing thin film layer having varying thickness directly or indirectly on the second semiconducting layer;
• annealing the substrate, first semiconductor layer, second semiconducting layer, quantum well layer and strain inducing thin film layer at a predetermined annealing temperature, to thereby achieve varied interdiffusion of constituent atoms between each respective quantum well layer section in the quantum well layer and the first and/or second semiconducting layers during annealing, the interdiffusion of each quantum layer well section varying based on the thickness of the thin film layer positioned above the quantum layer well section;
• and
• removing the strain inducing thin film layer to leave the quantum well layer sections having the varied interdiffusion, wherein
• the varied interdiffusion in each of the quantum well layer sections causes each of the quantum well layer sections to lase at a different peak energy when energized.

A method for use in manufacturing a laser diode emitter, comprising:

• forming a substrate;
• forming a first semiconducting layer of semiconducting material of a first type directly or indirectly on the substrate;
• depositing a first quantum well layer directly or indirectly on the first semiconducting layer by epitaxial growth, under first epitaxial growth conditions to achieve a first epitaxial structure in the first quantum well layer;
• depositing a first intervening layer directly or indirectly on the first quantum well layer by epitaxial growth;
• depositing a second quantum well layer directly or indirectly on the first separating layer by epitaxial growth under second epitaxial growth conditions to achieve a second epitaxial structure in the second quantum well layer;
• and
• forming a second semiconducting layer of a second type of semiconducting material directly or indirectly on the second quantum well layer, wherein
• both the first quantum well layer and the second quantum well layer include InxGa1−xN or both the first quantum well layer and second quantum well layer include Inx[AlyGa1−y]1−xP.