Heterostructure for an optoelectronic device
AssigneeSensor Electronic Technology, Inc.
InventorsMikhail Gaevski, Alexander Dobrinsky, Maxim S. Shatalov, Michael Shur
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Abstract
A heterostructure, such as a group III nitride heterostructure, for use in an optoelectronic device is described. The heterostructure can include a sacrificial layer, which is located on a substrate structure. The sacrificial layer can be at least partially decomposed using a laser. The substrate structure can be completely removed from the heterostructure or remain attached thereto. One or more additional solutions for detaching the substrate structure from the heterostructure can be utilized. The heterostructure can undergo additional processing to form the optoelectronic device.
Claims20
A method of fabricating a group III nitride heterostructure, the method comprising:
- epitaxially growing a sacrificial layer over a substrate structure, wherein the substrate structure includes a substrate and a set of group III nitride layers directly on the substrate, wherein the sacrificial layer is grown directly on a surface of a group III nitride layer in the set of group III nitride layers, wherein each of the set of group III nitride layers in the substrate structure have an aluminum molar fraction of at least 0.5, and wherein the sacrificial layer includes a plurality of sublayers, the plurality of sublayers including:
- an essentially continuous sublayer and a non-continuous sublayer;
- epitaxially growing the group III nitride heterostructure directly on the sacrificial layer;
- and
- decomposing the sacrificial layer by irradiating the sacrificial layer with a laser through the substrate structure to at least partially release the group III nitride heterostructure from the substrate structure, wherein the sacrificial layer is configured to result in absorption of the irradiated laser light at least an order of magnitude higher than any of the set of group III nitride layers in the substrate structure.
A method of fabricating a group III nitride heterostructure, the method comprising:
- epitaxially growing a sacrificial layer over a substrate structure, wherein the substrate structure includes a substrate and a set of group III nitride layers directly on the substrate, wherein the sacrificial layer is grown directly on a surface of a group III nitride layer in the set of group III nitride layers, and wherein the sacrificial layer includes a plurality of sublayers, the plurality of sublayers including:
- an essentially continuous sublayer and a non-continuous sublayer, the essentially continuous sublayer including at most ten percent voids;
- epitaxially growing the group III nitride heterostructure directly on the sacrificial layer;
- and
- decomposing the sacrificial layer by irradiating the sacrificial layer with a laser through the substrate structure to at least partially release the group III nitride heterostructure from the substrate structure, wherein the sacrificial layer is configured to result in absorption of the irradiated laser light at least an order of magnitude higher than any of the set of group III nitride layers in the substrate structure.
A method of fabricating a group III nitride heterostructure, the method comprising:
- epitaxially growing a sacrificial layer over a substrate structure, wherein the substrate structure includes a substrate and a set of group III nitride layers directly on the substrate, wherein the sacrificial layer is grown directly on a surface of a group III nitride layer in the set of group III nitride layers, and wherein the sacrificial layer includes a plurality of sublayers, the plurality of sublayers including:
- an essentially continuous sublayer and a non-continuous sublayer, the non-continuous sublayer including a region with a set of vacancies located adjacent to the essentially continuous sublayer and a plurality of columns located adjacent to the region with the set of vacancies, each of the plurality of columns spaced from adjacent columns of the plurality of columns;
- epitaxially growing the group III nitride heterostructure directly on the sacrificial layer;
- and
- decomposing the sacrificial layer by irradiating the sacrificial layer with a laser through the substrate structure to at least partially release the group III nitride heterostructure from the substrate structure, wherein the sacrificial layer is configured to result in absorption of the irradiated laser light at least an order of magnitude higher than any of the set of group III nitride layers in the substrate structure.
Dependencies are inferred from the claim text.