H01S 5/327
In aiibvi compounds
Official title: in AIIBVI compounds, e.g. ZnCdSe-laser
H01S5/327 (In aiibvi compounds) appears on 191 US grants and 76 published applications in this corpus.
Search patents in H01S- Granted patents
- 191
- Published applications
- 76
- Assignees
- 83
- Inventors
- 309
- Latest grant
- 15 Apr 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1986 | 2 | 0 |
| 1987 | 0 | 0 |
| 1988 | 2 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 4 | 0 |
| 1992 | 2 | 0 |
| 1993 | 5 | 0 |
| 1994 | 17 | 0 |
| 1995 | 17 | 0 |
| 1996 | 21 | 0 |
| 1997 | 11 | 0 |
| 1998 | 16 | 0 |
| 1999 | 10 | 0 |
| 2000 | 8 | 0 |
| 2001 | 4 | 1 |
| 2002 | 4 | 5 |
| 2003 | 6 | 8 |
| 2004 | 6 | 9 |
| 2005 | 4 | 7 |
| 2006 | 5 | 5 |
| 2007 | 2 | 5 |
| 2008 | 1 | 4 |
| 2009 | 4 | 10 |
| 2010 | 8 | 5 |
| 2011 | 6 | 2 |
| 2012 | 4 | 2 |
| 2013 | 2 | 0 |
| 2014 | 2 | 3 |
| 2015 | 3 | 1 |
| 2016 | 3 | 2 |
| 2017 | 2 | 1 |
| 2018 | 1 | 0 |
| 2019 | 0 | 0 |
| 2020 | 1 | 0 |
| 2021 | 0 | 0 |
| 2022 | 1 | 2 |
| 2023 | 2 | 3 |
| 2024 | 1 | 0 |
| 2025 | 2 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
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- Epitaxial oxide materials, structures, and devices22 Jun 2023US 2023/0197794 A1Silanna UV Technologies Pte Ltd
- Epitaxial oxide materials, structures, and devices15 Jun 2023US 2023/0187506 A1Silanna UV Technologies Pte Ltd
- Epitaxial oxide materials, structures, and devices11 May 2023US 2023/0147475 A1Silanna UV Technologies Pte Ltd
- Nitride semiconductor structure, nitride semiconductor device, and method for fabricating the device17 Nov 2022US 2022/0367748 A1Panasonic Intellectual Property Management Co., Ltd.
Most cited
By later US patents
- Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device3,918US 7,501,293 B2Murata Manufacturing Co., Ltd. · 2009
- Selfluminous display device having light emission sources having substantially non-overlapping spectra levels276US 6,222,203 B1Sony Corporation · 2001
- Semiconductor light-emitting device and method for manufacturing the same136US 7,132,691 B1Rohm Co., Ltd. · 2006
- Low defect density/arbitrary lattice constant heteroepitaxial layers101US 5,659,187 AInternational Business Machines Corporation · 1997
- Optoelectronic device containing at least one active device layer having a wurtzite crystal structure, and methods of making same88US 9,431,794 B2VerLASE Technologies LLC · 2016