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US 11,695,096 B2Granted
Epitaxial oxide materials, structures, and devices
AssigneeSilanna UV Technologies Pte Ltd
InventorPetar Atanackovic
Life of this patent
Estimating the term…
Abstract
In some embodiments, a semiconductor structure includes: a first epitaxial oxide semiconductor layer; a metal layer; and a contact layer adjacent to the metal layer, and between the first epitaxial oxide semiconductor layer and the metal layer. The contact layer can include an epitaxial oxide semiconductor material. The contact layer can also include a region comprising a gradient in a composition of the epitaxial oxide semiconductor material adjacent to the metal layer, or a gradient in a strain of the epitaxial oxide semiconductor material over a region adjacent to the metal layer.
Claims20
A semiconductor structure comprising:
- a first epitaxial oxide semiconductor layer;
- a metal layer;
- and
- a contact layer adjacent to the metal layer, and between the first epitaxial oxide semiconductor layer and the metal layer, the contact layer comprising:
- an epitaxial oxide semiconductor material;
- and
- a region comprising a gradient in a composition of the epitaxial oxide semiconductor material adjacent to the metal layer,
- wherein the contact layer comprises a chirp layer comprising alternating wide bandgap sublayers and narrow bandgap sublayers, wherein the gradient in the composition of the epitaxial oxide semiconductor material adjacent to the metal layer is formed by varying thicknesses of the wide bandgap and the narrow bandgap sublayers through the contact layer,
- wherein the contact layer forms a p-contact with the metal layer;
- and wherein the chirp layer further comprises:
- (AlxGa1−x)2O3 materials, wherein x is from 0 to 1, with a Pna21 space group, and with metal-polar faces facing the metal layer;
- an average aluminium oxide content per period that changes throughout the chirp layer;
- and
- a lower average aluminium oxide content per period close to the metal layer and a higher average aluminium oxide content per period farther away from the metal layer.
11 more elements
A semiconductor structure comprising:
- a first epitaxial oxide semiconductor layer;
- a metal layer;
- and
- a contact layer adjacent to the metal layer, and between the first epitaxial oxide semiconductor layer and the metal layer, the contact layer comprising:
- an epitaxial oxide semiconductor material;
- and
- a region comprising a gradient in a composition of the epitaxial oxide semiconductor material adjacent to the metal layer,
- wherein the contact layer comprises a chirp layer comprising alternating wide bandgap sublayers and narrow bandgap sublayers, wherein the gradient in the composition of the epitaxial oxide semiconductor material adjacent to the metal layer is formed by varying thicknesses of the wide bandgap and the narrow bandgap sublayers through the contact layer,
- wherein the contact layer forms an n-contact with the metal layer, and
- wherein the chirp layer further comprises:
- (AlxGa1−x)2O3, wherein x is from 0 to 1, with a Pna21 space group, and with oxygen-polar faces facing the metal layer;
- an average aluminium oxide content per period that changes throughout the chirp layer;
- and
- a lower average aluminium oxide content per period close to the metal layer and a higher average aluminium oxide content per period farther away from the metal layer.
11 more elements
A semiconductor structure comprising:
- a first epitaxial oxide semiconductor layer;
- a metal layer;
- and
- a contact layer adjacent to the metal layer, and between the first epitaxial oxide semiconductor layer and the metal layer, the contact layer comprising:
- an epitaxial oxide semiconductor material;
- and
- a region comprising a gradient in a composition of the epitaxial oxide semiconductor material adjacent to the metal layer,
- wherein the contact layer comprises a chirp layer comprising alternating wide bandgap sublayers and narrow bandgap sublayers, wherein the gradient in the composition of the epitaxial oxide semiconductor material adjacent to the metal layer is formed by varying thicknesses of the wide bandgap and the narrow bandgap sublayers through the contact layer,
- wherein the contact layer forms a p-contact with the metal layer, and
- wherein the chirp layer further comprises:
- (AlxGa1−x)2O3, wherein x is from 0 to 1, with a Pna21 space group, and with oxygen-polar faces facing the metal layer;
- an average aluminium oxide content per period that changes throughout the chirp layer;
- and
- a higher average aluminium oxide content per period close to the metal layer and a lower average aluminium oxide content per period farther away from the metal layer.
11 more elements
A semiconductor structure comprising:
- a first epitaxial oxide semiconductor layer;
- a metal layer;
- and
- a contact layer adjacent to the metal layer, and between the first epitaxial oxide semiconductor layer and the metal layer, the contact layer comprising:
- an epitaxial oxide semiconductor material;
- and
- a region comprising a gradient in a composition of the epitaxial oxide semiconductor material adjacent to the metal layer,
- wherein the contact layer comprises a chirp layer comprising alternating wide bandgap sublayers and narrow bandgap sublayers, wherein the gradient in the composition of the epitaxial oxide semiconductor material adjacent to the metal layer is formed by varying thicknesses of the wide bandgap and the narrow bandgap sublayers through the contact layer,
- wherein the contact layer forms an n-contact with the metal layer, and
- wherein the chirp layer further comprises:
- (AlxGa1−x)2O3, wherein x is from 0 to 1, with a Pna21 space group, and with metal-polar faces facing the metal layer;
- an average aluminium oxide content per period that changes throughout the chirp layer;
- and
- a higher average aluminium oxide content per period close to the metal layer and a lower average aluminium oxide content per period farther away from the metal layer.
11 more elements
Dependencies are inferred from the claim text.