G11C 2216/02
Structural aspects of erasable programmable read-only memories
G11C2216/02 (Structural aspects of erasable programmable read-only memories) appears on 638 US grants and 578 published applications in this corpus.
Search patents in G11C- Granted patents
- 638
- Published applications
- 578
- Assignees
- 183
- Inventors
- 900
- Latest grant
- 14 Jul 2026
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|---|---|---|
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| 2001 | 32 | 7 |
| 2002 | 17 | 31 |
| 2003 | 34 | 25 |
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| 2023 | 17 | 18 |
| 2024 | 15 | 20 |
| 2025 | 16 | 7 |
| 2026 | 8 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- G11C 2216/10Floating gate memory cells with a single polysilicon layerIndexing code283
- G11C 2216/08Nonvolatile memory wherein data storage is accomplished by storing relatively few electronsIndexing code126
- G11C 2216/06Floating gate cells in which the floating gate consists of multiple isolatedIndexing code119
- G11C 2216/04Nonvolatile memory cell provided with a separate control gate for erasing theIndexing code113
Recent patents
- Memory device and method of erasure operations using GIDL and negative wordline voltages14 Jul 2026US 12,682,958 B2SK hynix Inc.
- Semiconductor memory device with even and odd coplanar wordlines7 Jul 2026US 12,676,195 B2Kioxia Corporation
- Method for forming semiconductor structure with wave shaped erase gate10 Mar 2026US 12,573,458 B2United Microelectronics Corp.
- Method of scanning an image using non-volatile memory array neural network classifier3 Feb 2026US 12,541,679 B2Silicon Storage Technology, Inc.
- Transistor and method for manufacturing the same3 Feb 2026US 12,543,348 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Non-volatile memory integrated circuit and corresponding manufacturing method23 Jul 2026US 2026/0214894 A1STMicroelectronics International N. V.
- Temperature compensation for analog memory cells in a neural network7 May 2026US 2026/0128092 A1Silicon Storage Technology, Inc.
- Transistor and method for manufacturing the same7 May 2026US 2026/0129917 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor memory device5 Feb 2026US 2026/0040542 A1United Microelectronics Corp.
- Analog computing unit for representing negative weights22 Jan 2026US 2026/0024581 A1Intelligent HW, Inc.
Most cited
By later US patents
- Memory using insulator traps313US 6,545,314 B2Micron Technology, Inc. · 2003
- Semiconductor integrated circuit and nonvolatile memory element299US 6,614,684 B1Hitachi, Ltd. · 2003
- Nano-structure memory device215US 5,714,766 AInternational Business Machines Corporation · 1998
- Electronic gain cell based charge sensor212US 6,953,958 B2Cornell Research Foundation, Inc. · 2005
- Aerosol silicon nanoparticles for use in semiconductor device fabrication184US 6,586,785 B2California Institute of Technology · 2003