G11C 2216/06
Floating gate cells in which the floating gate consists of multiple isolated
Official title: Floating gate cells in which the floating gate consists of multiple isolated silicon islands, e.g. nanocrystals
G11C2216/06 (Floating gate cells in which the floating gate consists of multiple isolated) appears on 119 US grants and 130 published applications in this corpus.
Search patents in G11C- Granted patents
- 119
- Published applications
- 130
- Assignees
- 53
- Inventors
- 215
- Latest grant
- 22 Dec 2020
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 2 | 0 |
| 2001 | 3 | 2 |
| 2002 | 0 | 6 |
| 2003 | 6 | 8 |
| 2004 | 6 | 7 |
| 2005 | 11 | 16 |
| 2006 | 7 | 14 |
| 2007 | 16 | 21 |
| 2008 | 9 | 15 |
| 2009 | 17 | 16 |
| 2010 | 8 | 2 |
| 2011 | 8 | 8 |
| 2012 | 7 | 6 |
| 2013 | 3 | 3 |
| 2014 | 6 | 1 |
| 2015 | 2 | 3 |
| 2016 | 4 | 1 |
| 2017 | 1 | 0 |
| 2018 | 1 | 0 |
| 2019 | 0 | 0 |
| 2020 | 1 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Quantum dot circuit and a method of characterizing such a circuit22 Dec 2020US 10,872,956 B2Nederlandse Organisatie voor toegepast-natuurwetenschappelijk onderzoek TNO
- Semiconductor memory7 Aug 2018US 10,043,808 B1Toshiba Memory Corporation
- Quantum dot channel (QDC) quantum dot gate transistors, memories and other devices15 Aug 2017US 9,735,236 B2
- Method for preconditioning thin film storage array for data retention20 Sep 2016US 9,449,713 B2Freescale Semiconductor, Inc.
- Hybrid dielectric non-volatile memory with nano particles (Si/SiO2 core/shell) as charge trapping layer2 Aug 2016US 9,406,765 B1Nano and Advanced Materials Institute Limited
- Quantum dot circuit and a method of characterizing such a circuit23 Apr 2020US 2020/0127096 A1Nederlandse Organisatie voor toegepast-natuurwetenschappelijk onderzoek TNO
- Quantum dot channel (qdc) quantum dot gate transistors, memories and other devices14 Jul 2016US 2016/0204202 A1
- Junction field-effect quantum dot memory switch20 Aug 2015US 2015/0236284 A1International Business Machines Corporation
- Nonvolatile memory device using semiconductor nanocrystals and method of forming same16 Jul 2015US 2015/0200277 A1International Business Machines Corporation
- Methods of making multi-state non-volatile memory cells5 Feb 2015US 2015/0037958 A1Freescale Semiconductor, Inc.
Most cited
By later US patents
- Aerosol silicon nanoparticles for use in semiconductor device fabrication184US 6,586,785 B2California Institute of Technology · 2003
- Method for fabricating semiconductor nanocrystal and semiconductor memory device using the semiconductor nanocrystal145US 6,090,666 ASharp Kabushiki Kaisha · 2000
- Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements139US 6,925,007 B2SanDisk Corporation · 2005
- Nonvolatile memory device using semiconductor nanocrystals and method of forming same131US 7,045,851 B2International Business Machines Corporation · 2006
- Scalable flash/NV structures and devices with extended endurance109US 7,012,297 B2Micron Technology, Inc. · 2006