Junction field-effect quantum dot memory switch

A method comprising:

• providing a structure including an electrically insulating substrate, a channel region adjoining the electrically insulating substrate, and doped source and drain regions operatively associated with the channel region, the channel region and doped source and drain regions having the same conductivity type;
• forming a charge storage region directly on the channel region, the charge storage region including a semiconductor layer containing quantum structures, deep traps or combinations thereof;
• forming a carrier injection layer in direct contact with the charge storage region for providing charges to the quantum structures, deep traps or combinations thereof;
• forming a gate dielectric layer on the charge storage region, and
• forming a gate on the gate dielectric layer.

A method comprising:

• providing a field-effect memory device including:
• a channel region having a conductivity type and adjoining an electrically insulating substrate;
• doped source and drain regions operatively associated with and having the same conductivity type as the channel region;
• a gate operatively associated with the channel region;
• a charge storage region in direct contact with the channel region and comprising a semiconductor layer containing quantum structures, deep traps or combinations thereof between the gate and channel;
• injection regions in direct contact with the charge storage region for providing charges to the quantum structures, deep traps or combinations thereof, and
• a gate dielectric layer between the gate and the charge storage region;
• applying a gate bias, causing the injection of carriers into the charge storage region, and
• causing the carriers to be retained by the quantum structures, deep traps or combinations thereof.